BUZ71A
N - CHANNEL 50V - 0.1
- 13A TO-220
STripFET
TM
POWER MOSFET
s
TYPICAL R
DS(on)
= 0.1
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
HIGH CURRENT CAPABILITY
s
175
o
C OPERATING TEMPERATURE
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
July 1999
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
50
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
50
V
V
GS
Gate-source Voltage
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
13
A
I
DM
Drain Current (pulsed)
52
A
P
tot
Total Dissipation at T
c
= 25
o
C
40
W
T
stg
Storage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
DIN HUMIDITY CATEGORY (DIN 40040)
E
IEC CLIMATIC CATEGORY (DIN IEC 68-1)
55/150/56
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
TYPE
V
DSS
R
DS(on)
I
D
BUZ71A
50 V
< 0.12
13 A
1/8
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
3.75
o
C/W
R
thj-amb
Thermal Resistance Junction-ambient Max
62.5
o
C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
14
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
50
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A V
GS
= 0
50
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
j
= 125
o
C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 1 mA
2.1
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V I
D
= 9 A
0.1
0.12
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
= 25 V I
D
= 9 A
4
7.7
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0
760
100
30
pF
pF
pF
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on )
t
r
t
d(of f)
t
f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 30 V I
D
= 8 A
R
GS
= 50
V
GS
= 10 V
20
65
70
35
ns
ns
ns
ns
BUZ71A
2/8
ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current
(pulsed)
13
52
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 28 A V
GS
= 0
1.8
V
t
rr
Q
rr
Reverse Recovery
Time
Reverse Recovery
Charge
I
SD
= 14 A di/dt = 100 A/
s
V
DD
= 30 V T
j
= 150
o
C
65
0.17
ns
C
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
BUZ71A
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
BUZ71A
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
BUZ71A
5/8
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