BUZ72A
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
s
TYPICAL R
DS(on)
= 0.23
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
175
o
C OPERATING TEMPERATURE
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS ( on)
I
D
BUZ72A
100 V
< 0. 25
11 A
1
2
3
TO-220
June 1993
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
D S
Drain-source Voltage (V
GS
= 0)
100
V
V
DG R
Drain- gate Voltage (R
GS
= 20 k
)
100
V
V
GS
Gate-source Voltage
20
V
I
D
Drain Current (cont inuous) at T
c
= 25
o
C
11
A
I
DM
Drain Current (pulsed)
44
A
P
tot
Total Dissipation at T
c
= 25
o
C
70
W
T
stg
St orage Temperat ure
-65 to 175
o
C
T
j
Max. Operat ing Junction Temperature
175
o
C
DIN Humidit y Category (DI N 40040)
E
I EC Climatic Category (DIN I EC 68-1)
55/150/56
1/7
THERMAL DATA
R
thj-cas e
R
thj- amb
Thermal Resist ance Junct ion-case
Max
Thermal Resist ance Junct ion-ambient
Max
2.14
62.5
o
C/ W
o
C/ W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Uni t
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
11
A
E
AS
Single Pulse Avalanche Energy
(st arting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 25 V)
36
mJ
E
AR
Repet itive Avalanche Energy
(pulse width limited by T
j
max,
< 1%)
9
mJ
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
< 1%)
7
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
( BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
G S
= 0
100
V
I
DS S
Zero Gate Volt age
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
j
= 125
o
C
250
1000
A
A
I
G SS
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
G S(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2
2.9
4
V
R
DS( on)
St atic Drain-source On
Resist ance
V
GS
= 10 V
I
D
= 5 A
0.23
0. 25
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
= 25 V
I
D
= 5 A
2.7
4.5
S
C
iss
C
oss
C
rss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
G S
= 0
330
90
25
450
120
40
pF
pF
pF
SWITCHING
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off )
t
f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 50 V
I
D
= 5.5 A
R
GS
= 4.7
V
GS
= 10 V
10
50
25
20
15
75
40
30
ns
ns
ns
ns
BUZ72A
2/7
ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
I
S D
I
SD M
Source-drain Current
Source-drain Current
(pulsed)
11
44
A
A
V
S D
(
)
Forward On Volt age
I
SD
= 22 A
V
G S
= 0
1.6
V
t
rr
Q
rr
Reverse Recovery
Time
Reverse Recovery
Charge
I
SD
= 11 A
di/dt = 100 A/
s
V
DD
= 20 V
T
j
= 150
o
C
80
0.22
ns
C
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
Derating Curve
Output Characteristics
BUZ72A
3/7
Transfer Characteristics
Static Drain-Source On Resistance
Gate Charge vs Gate-Source Voltage
Transconductance
Maximum Drain Current vs Temperature
Capacitance Variation
BUZ72A
4/7
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-Drain Diode Forward Characteristics
BUZ72A
5/7
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