PZT3906
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
s
SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
s
SOT-223 PLASTIC PACKAGE FOR
SURFACE MOUNTING CIRCUITS
s
TAPE AND REEL PACKING
s
THE NPN COMPLEMENTARY TYPE IS
PZT3904
APPLICATIONS
s
WELL SUITABLE FOR SMD MOTHER
BOARD ASSEMBLY
s
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
June 2002
1
2
2
3
SOT-223
Type
Marking
PZT3906
3906
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
-60
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-40
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
-6
V
I
C
Collector Current
-200
mA
P
tot
Total Dissipation at T
C
= 25
o
C
1
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1/4
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-Ambient Max
125
o
C/W
Device mounted on a PCB of 1 cm
2
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current (V
BE
= 3 V)
V
CE
= -30 V
-50
nA
I
BEX
Collector Cut-off
Current (V
BE
= 3 V)
V
CE
= -30 V
-50
nA
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -1 mA
-40
V
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= -10
A
-60
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= -10
A
-6
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -10 mA I
B
= -1 mA
I
C
= -50 mA I
B
= -5 mA
-0.25
-0.4
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -10 mA I
B
= -1 mA
I
C
= -50 mA I
B
= -5 mA
-0.65
-0.85
-0.95
V
V
h
FE
DC Current Gain
I
C
= -0.1 mA V
CE
= -1 V
I
C
= -1 mA V
CE
= -1 V
I
C
= -10 mA V
CE
= -1 V
I
C
= -50 mA V
CE
= -1 V
I
C
= -100 mA V
CE
= -1 V
60
80
100
60
30
300
f
T
Transition Frequency
I
C
= -10mA V
CE
= -20 V f = 100MHz
250
MHz
NF
Noise Figure
V
CE
= -5 V I
C
= -0.1 mA f = 10 Hz
to 15.7 KHz R
G
= 1 K
4
dB
C
CBO
Collector-Base
Capacitance
I
E
= 0 V
CB
= -5 V f = 100 KHz
6
pF
C
EBO
Emitter-Base
Capacitance
I
C
= 0 V
EB
= -0.5 V f = 100 KHz
25
pF
t
d
Delay Time
I
C
= -10 mA I
B
= -1 mA
V
CC
= -3V
35
ns
t
r
Rise Time
35
ns
t
s
Storage Time
I
C
= -10 mA I
B1
= -I
B2
= -1 mA
V
CC
= -3V
225
ns
t
f
Fall Time
72
ns
Pulsed: Pulse duration = 300
s, duty cycle
2 %
PZT3906
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.80
0.071
B
0.60
0.70
0.80
0.024
0.027
0.031
B1
2.90
3.00
3.10
0.114
0.118
0.122
c
0.24
0.26
0.32
0.009
0.010
0.013
D
6.30
6.50
6.70
0.248
0.256
0.264
e
2.30
0.090
e1
4.60
0.181
E
3.30
3.50
3.70
0.130
0.138
0.146
H
6.70
7.00
7.30
0.264
0.276
0.287
V
10
o
10
o
A1
0.02
P008B
SOT-223 MECHANICAL DATA
PZT3906
3/4
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics Printed in Italy All Rights Reserved
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PZT3906
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