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BYT230PIV-400
BYT231PIV-400
May 2000 - Ed: 5D
FAST RECOVERY RECTIFIER DIODES
These rectifier devices are suited for free-wheeling
function in converters and motor control circuits.
Packaged in ISOTOP, they are intended for use in
Switch Mode Power Supplies.
DESCRIPTION
n
VERY LOW REVERSE RECOVERY TIME
n
VERY LOW SWITCHING LOSSES
n
LOW NOISE TURN-OFF SWITCHING
n
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 V
RMS
Capacitance = 45 pF
Inductance < 5 nH
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
400
V
I
FRM
Repetitive peak forward current
tp=5
s F=1kHz
900
A
I
F(RMS)
RMS forward current
50
A
I
F(AV)
Average forward current
Tc = 75
C
= 0.5
30
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
350
A
T
stg
Storage temperature range
- 40 to + 150
C
Tj
Maximum operating junction temperature
150
C
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 30 A
V
RRM
400 V
V
F
(max)
1.4 V
trr (max)
50 ns
MAIN PRODUCT CHARACTERISTICS
ISOTOP
TM
(Plastic)
K2
A2
A1
K1
BYT231PIV-400
A2
K1
A1
K2
BYT230PIV-400
TM: ISOTOP is a registered trademark of STMicroelectronics.
BYT230PIV-400 / BYT231PIV-400
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Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 30 A
1.5
V
Tj = 100
C
1.4
I
R
**
Reverse leakage cur-
rent
Tj = 25
C
V
R
= V
RRM
35
A
Tj = 100
C
6
mA
Pulse test : * tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
Total
1.5
0.8
C/W
R
th(c)
Coupling
0.1
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
To evaluate the conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.0095 I
F
2
(RMS)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
Tj = 25
C
I
F
= 1A V
R
= 30V dI
F
/dt = - 15A/
s
100
ns
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
50
RECOVERY CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t
IRM
M ax i m um r ev er s e
rec ov er y t im e
dI
F
/dt = - 120 A/
s
V
CC
= 200 V
I
F
= 30 A
L
p
0.05
H
Tj = 100
C
(see fig. 13)
75
ns
dI
F
/dt = - 240 A/
s
50
I
RM
M ax i m um r ev er s e
rec ov er y c ur r ent
dI
F
/dt = - 120 A/
s
9
A
dI
F
/dt = - 240 A/
s
12
C =
V
V
RP
CC
Turn-off overvoltage
coefficient
Tj = 100
C
V
CC
= 60V
I
F
= I
F(AV)
dI
F
/dt = - 30A/
s
L
p
= 1
H
(see fig. 14)
3.3
/
TURN-OFF SWITCHING CHARACTERISTICS
BYT230PIV-400 / BYT231PIV-400
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0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
50
100
150
200
250
IM(A)
P=40W
P=30W
P=50W
P=20W
T
=tp/T
tp
Fig. 2: Peak current versus form factor (per diode).
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
Tamb(
C)
IF(av)(A)
Rth(j-a)=5
C/W
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
Fig. 3: Average forward current versus ambient
temperature (
=0.5, per diode).
1E-3
1E-2
1E-1
1E+0
40
60
80
100
120
140
160
180
200
t(s)
IM(A)
Tc=75
C
Tc=50
C
Tc=25
C
I
M
t
=0.5
Fig. 4: Non repetitive surge peak forward current
versus overload duration (per diode).
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0.0
0.5
1.0
1.5
2.0
2.5
0.1
1.0
10.0
100.0
200.0
VFM(V)
IFM(A)
Typical values
Tj=100
C
Tj=25
C
Tj=100
C
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
tp(s)
K=[Zth(j-c)/Rth(j-c)]
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
BYT230PIV-400 / BYT231PIV-400
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1
10
100
200
20
30
40
50
60
70
80
90
100
VR(V)
C(pF)
F=1MHz
Tj=25
C
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10
20
50
100
200
500
10
100
1000
dIF/dt(A/
s)
Qrr(nC)
IF=IF(av)
90% confidence
Tj=100
C
Fig. 8: Recovery charges versus dI
F
/dt (per
diode).
0
100
200
300
400
500
0
5
10
15
20
25
30
VFP(V)
IF=IF(av)
90% confidence
Tj=100
C
dIF/dt(A/
s)
Fig. 10: Transient peak forward voltage versus
dI
F
/dt (per diode).
10
20
50
100
200
500
1
10
50
IRM(A)
IF=IF(av)
90% confidence
Tj=100
C
dIF/dt(A/
s)
Fig. 9: Recovery current versus dI
F
/dt (per diode).
0
25
50
75
100
125
150
0.25
0.50
0.75
1.00
1.25
1.50
Tj(
C)
Qrr;IRM[Tj] / Qrr;IRM[Tj=100
C]
IRM
Qrr
Fig. 12: Dynamic parameters versus junction
temperature.
0
100
200
300
400
500
0.00
0.25
0.50
0.75
1.00
1.25
1.50
tfr(
s)
IF=IF(av)
90% confidence
Tj=100
C
dIF/dt(A/
s)
Fig. 11: Forward recovery time versus dI
F
/dt (per
diode).
BYT230PIV-400 / BYT231PIV-400
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L C
DUT
VCC
IF
VF
I RM
VCC
tIRM
di F/ dt
Fig. 13: Turn-off switching characteristics (without
serie inductance).
LC
DUT
VCC
LP
IF
VF
VRP
VCC
di F/ dt
Fig. 14: Turn-off switching characteristics (with
serie inductance).
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