BYW99P/PI/W
October 1999
Ed : 2A
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
SOT93
(Plastic)
BYW99P-200
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION TOP3I :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
DESCRIPTION
FEATURES
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, TOP3I or TO247 this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
isolated
TOP3I
(Plastic)
BYW99PI-200
Symbol
Parameter
Value
Unit
I
F(RMS)
RMS forward current
Per diode
35
A
I
F(AV)
Average forward current
= 0.5
SOT93 / TO247
Tc=120
C
Per diode
15
A
TOP3I
Tc=115
C
Per diode
15
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
Per diode
200
A
Tstg
Tj
Storage and junction temperature range
- 40 to + 150
- 40 to + 150
C
C
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
A1
K
A2
TO247
(Plastic)
BYW99W-200
A1
K
A2
1/6
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
T
j
= 25
C
V
R
= V
RRM
20
A
T
j
= 100
C
1.5
mA
V
F **
T
j
= 125
C
I
F
= 12 A
0.85
V
T
j
= 125
C
I
F
= 25 A
1.05
T
j
= 25
C
I
F
= 25 A
1.15
Pulse test : * tp = 5 ms,
< 2 %
** tp = 380
s,
< 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.016 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
trr
T
j
= 25
C
I
F
= 0.5A
I
R
= 1A
Irr = 0.25A
25
ns
I
F
= 1A
V
R
= 30V
dI
F
/dt = -50A/
s
40
tfr
T
j
= 25
C
I
F
= 1A
V
FR
= 1.1 x V
F
tr = 10 ns
15
ns
V
FP
T
j
= 25
C
I
F
= 1A
tr = 10 ns
2
V
RECOVERY CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
SOT93 / TO247
Per diode
1.8
C/W
Total
1.0
TOP3I
Per diode
2.0
Total
1.25
Rth (c)
Coupling
SOT93 / TO247
0.2
C/W
TOP3I
0.5
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
BYW99P/PI/W
2/6
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
50
100
150
200
250
300
350
P=10W
P=20W
P=30W
T
I
M
=tp/T
tp
IM(A)
Fig.2 : Peak current versus form factor.
0.1
1
10
100 200
Tj= 125 C
o
IFM(A)
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig.3 : Forward voltage drop versus forward
current (maximum values).
0.1
1.0
0.2
0.5
Zth(j-c) (tp.
)
K =
Rth(j-c)
= 0 . 5
= 0 . 2
= 0 .1
Singl e puls e
tp(s)
T
=tp/T
tp
1.0E-03
1.0E-02
1.0E-01
1. 0E+00
K
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0
2.5
5
7.5
10
12.5
15
17.5
20
0
2.5
5
7.5
10
12.5
15
17.5
20
=0.05
=0.1
=0.2
=0.5
T
=tp/ T
tp
IF(av)(A)
PF(av)(W)
=1
Fig.1 : Average forward power dissipation versus
average forward current.
0.001
0.01
0.1
1
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
IM
t
=0.5
t(s)
IM(A)
Tc=25 C
o
Tc=60 C
o
Tc=115 C
o
Fig.6 : Non repetitive surge peak forward current
versus overload duration.
(TOP3I)
0.001
0.01
0.1
1
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
IM
t
=0.5
t(s)
IM(A)
Tc=25 C
o
Tc=75 C
o
Tc=120 C
o
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
(SOT93, TO247)
BYW99P/PI/W
3/6
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
T
=tp/T
tp
=0.5
F(av)( A)
I
o
Tamb( C)
Rth(j-a)=15
C/W
o
Rth(j-a)=Rth(j-c)
Fig.7
:
Average
current
versus
ambient
temperature.
(
= 0.5) (SOT93, TO247)
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
T
=tp/T
tp
=0.5
F(av)( A)
I
o
Tamb( C)
Rth(j-a)=15
C/W
o
Rth(j-a)=Rth(j-c)
Fig.8
:
Average
current
versus
ambient
temperature.
(
= 0.5) (TOP3I)
1
10
100
1 00
11 0
1 20
1 30
1 40
1 50
1 60
1 70
1 80
1 90
2 00
200
VR(V)
F=1Mhz Tj=25 C
o
C(pF)
Fig.9 : Junction capacitance versus reverse
voltage applied (Typical values).
1
10
100
0
5
1 0
1 5
20
25
30
35
40
45
50
55
60
QRR(nC)
90%CONFIDENC E
IF=IF(av)
Tj=100 C
O
Tj=25 C
O
dIF/dt(A/us)
Fig.10 : Recovery charges versus dI
F
/dt.
Tj(
C)
QRR ;IRM[Tj]/QRR ;IRM[Tj=125 C]
0
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
IRM
QRR
o
o
Fig.12 : Dynamic parameters versus junction
temperature.
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
20
IRM(A)
dIF/dt(A/us)
90%CONFIDENCE
Tj=100 C
O
Tj=25 C
O
IF=IF(av)
Fig.11 : Peak reverse current versus dIF/dt.
BYW99P/PI/W
4/6
PACKAGE MECHANICAL DATA
SOT93
Marking : Type number
Cooling method : C
Weight : 5.3 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.70
4.90
1.185
0.193
C
1.90
2.10
0.075
0.083
D
2.50 typ.
0.098 typ.
D1
2.00 typ.
0.078 typ
E
0.50
0.78
0.020
0.031
F
1.10
1.30
0.043
0.051
F3
1.75 typ
0.069 typ
F4
2.10 typ.
0.083 typ.
G
10.80
11.10
0.425
0.437
H
14.70
15.20
0.279
0.598
L
12.20
0.480
L2
16.20
0.638
L3
18.0 typ.
0.709 typ.
L5
3.95
4.15
0.156
0.163
L6
31.00 typ.
1.220 typ.
O
4.00
4.10
0.157
0.161
Marking : Type number
Cooling method : C
Weight : 4.7 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
PACKAGE MECHANICAL DATA
TOP3I (isolated)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
1.45
1.55
0.057
0.061
C
14.35
15.60
0.565
0.614
D
0.5
0.7
0.020
0.028
E
2.7
2.9
0.106
0.114
F
15.8
16.5
0.622
0.650
G
20.4
21.1
0.815
0.831
H
15.1
15.5
0.594
0.610
J
5.4
5.65
0.213
0.222
K
3.4
3.65
0.134
0.144
L
4.08
4.17
0.161
0.164
P
1.20
1.40
0.047
0.055
R
4.60 typ.
0.181 typ
BYW99P/PI/W
5/6
PDF 
ZIP