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PRELIMINARY DATA
November, 20 2002
DB-900-60W
60W / 26V / 869-894 MHz PA using 1x PD57070S
The
LdmosST FAMILY
Symbol
Parameter
Value
Unit
V
DD
Supply voltage
32
V
I
D
Drain Current
8
A
P
DISS
Power Dissipation
95
W
T
CASE
Operating Case Temperature
-20 to +85
o
C
P
amb
Max. Ambient Temperature
+55
o
C
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 60 W min. with 13 dB gain over
869 - 894 MHz
10:1 LOAD VSWR CAPABILITY
BeO FREE AMPLIFIER.
DESCRIPTION
The DB-900-60W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for IS-54/-136 and IS-95 base
station applications.
The DB-900-60W is designed in cooperation with
Europenne de Tlcommunications S.A
(www.etsa.fr), for high gain and broadband
performance operating in common source mode
at 26 V, capable of withstanding load mismatch up
to 10:1 all phases and with harmonics lower than
30 dBc.
ORDER CODE
DB-900-60W
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
MECHANICAL SPECIFICATION
L=60 mm W=30 mm H=10 mm
DB-900-60W
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Symbol
Test Conditions
Min.
Typ.
Max.
Unit
FREQ.
Frequency Range
869
894
MHz
Gain
P
OUT
= 60 W
13
14
dB
P
1dB
Over frequency range: 869 - 894 MHz
60
65
W
Flatness
Over frequency range and @ P
OUT
= 60 W
+/- 0.5
dB
Flatness
P
OUT
from 0.1 W to 60 W
1
dB
ND at P
1dB
P
1dB
45
52
%
IRTL
Input return Loss P
OUT
from 0.1 W to 60 W
-15
-10
dB
Harmonic
P
OUT
= 60 W
-30
dBc
VSWR
Load Mismatch all phases @ P
OUT
= 60 W
10:1
Spurious
10:1 VSWR all phases and P
OUT
from 0.1 to 60 W
-76
dBc
IMD
3
P
OUT
= 60 WPEP
-25
dBc
ELECTRICAL SPECIFICATION (T
amb
= +25
o
C, Vdd = 26 V, Idq = 250 mA)
TYPICAL PERFORMANCE
P1dB vs. Frequency
40
50
60
70
80
865
870
875
880
885
890
895
900
f (MHz)
P
1dB
(
W
)
Vcc = 26 V
Idq = 250 mA
Drain Efficiency at P1dB vs. Frequency
20
30
40
50
60
70
865
870
875
880
885
890
895
900
f (MHz)
Nd (
%
)
Vcc = 26 V
Idq = 250 m A
Power Gain vs. Frequency
12
13
14
15
16
17
18
865
870
875
880
885
890
895
900
f (MHz)
Gp
(
d
B
)
Vcc = 26 V
Idq = 250 m A
Pin = 28 dBm
Pin = 34 dBm
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DB-900-60W
TEST FIXTURE COMPONENT LAYOUT
TEST CIRCUIT PHOTOMASTER
TEST CIRCUIT COMPONENT PART LIST
C O M P O N E N T
D E S C R IP T IO N
T 1
P D 5 7 0 7 0 S T R A N S IS T O R
C 1
1 F / 3 5 V E L E C T R O L Y T IC C A P A C IT O R
C 2
1 0 0 n F - 6 3 V C E R A M IC C H IP C A P A C IT O R
C 3 ,C 4
1 0 0 p F - 5 0 0 V C E R A M IC C H IP C A P A C IT O R
C 5 , C 7 , C 1 3
1 0 p F - 5 0 0 V C E R A M IC C H IP C A P A C IT O R
C 6 , C 8
4 7 p F - 5 0 0 V C E R A M IC C H IP C A P A C IT O R
C 1 0
4 .7 p F - 5 0 0 V C E R A M IC C H IP C A P A C IT O R
C 1 1
3 .3 p F - 5 0 0 V C E R A M IC C H IP C A P A C IT O R
C 1 2 , C 9
6 .8 p F - 5 0 0 V C E R A M IC C H IP C A P A C IT O R
C V 1
A D J U S T A B L E C A P A C IT O R 0 .6 - 4 .5 p F / 5 0 0 V
P 1
1 0 K O h m s M U L T IT U R N P O T E N T IO M E T E R
R 1
4 .7 K O h m s 1 /4 W 1 2 0 6 S M D C H IP R E S IS T O R
R 2
1 0 K O h m s 1 /4 W 1 2 0 6 S M D C H IP R E S IS T O R
D 1
Z E N E R D IO D E 5 V - 5 0 0 m W S O D 8 0
B O A R D
M E T C L A D M X 3 - 3 0 - C 1 /1 0 C T H K 0 .7 6 2 m m C u 3 5
S U B S T R A T E
T E F L O N - G L A S S E r = 2 .5 5
B A C K S ID E
C O P P E R F L A N G E 2 m m T H IC K N E S S
C E R A M IC C H IP C A P A C IT O R S
A T C 1 0 0 B o r E Q U IV A L E N T
DB-900-60W
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