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EMIF06-HMC01F2
6 LINES EMI FILTER
INCLUDING ESD PROTECTION
REV. 1
January 2005
IPADTM
Flip-Chip
(16 Bumps)
Figure 1: Pin Configuration (ball side)
B
1
3
4
2
C
D
A
TM: IPAD is a trademark of STMicroelectronics.
Table 1: Order Code
Part Number
Marking
EMIF06-HMC01F2
GH
MAIN APPLICATION
High Speed MultiMediaCardTM
DESCRIPTION
The EMIF06-HMC01F2 is a highly integrated array
designed to suppress EMI / RFI noise for High
Speed MultiMediaCardTM port filtering.
The EMIF06-HMC01F2 Flip-Chip packaging
means the package size is equal to the die size.
Additionally, this filter includes an ESD protection
circuitry which prevents the protected device from
destruction when subjected to ESD surges up to
15 kV.
BENEFITS
6 lines low-pass-filter
High efficiency in EMI filtering
Very low PCB space consuming: < 4.4 mm
2
Lead Free package
Very thin package: 0.65 mm
High efficiency in ESD suppression
High reliability offered by monolithic integration
High reducing of parasitic elements through
integration & wafer level packaging
COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2
Level 4 on external pins15kV (air discharge)
8kV (contact discharge)
MIL STD 883E - Method 3015-6 Class 3
Figure 2: Configuration
R10
R11
R12
R13
R14
R2
R3
R4
R5
R6
R7
Vmmc
MMCclk
GND
MMCcmd
MMCdat0
MMCdat1
MMCdat2
MMCdat3
Vmmc
clk
cmd
dat0
dat1
dat2
dat3
Table 2: Ball configuration
A1
cmd
C1
dat2
A2
clk
C2
gnd
A3
Vmmc/Vdd
C3
MMCdat1
A4
MMCclk
C4
MMCdat0
B1
dat1
D1
dat3
B2
dat0
D2
gnd
B3
gnd
D3
MMCdat3
B4
MMCcmd
D4
MMCdat2
EMIF06-HMC01F2
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Table 3: Absolute Maximum Ratings (T
amb
= 25C))
Table 4: Electrical Characteristics (T
amb
= 25C)
Symbol
Parameter and test conditions
Value
Unit
V
PP
Internal pins (A4, B4, C3, C4, D3, D4):
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge
External pins (A1, A2, A3, B1, B2, C1, D1):
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge
2
2
15
8
kV
T
j
Maximum junction temperature
125
C
T
op
Operating temperature range
- 40 to + 85
C
T
stg
Storage temperature range
- 55 to + 150
C
Symbol
Parameter
V
BR
Breakdown voltage
I
RM
Leakage current @ V
RM
V
RM
Stand-off voltage
C
line
Input capacitance per line
Symbol
Test conditions
Tolerance
Min.
Typ.
Max.
Unit
V
BR
I
R
= 1 mA
14
V
I
RM
V
RM
= 3V
0.1
A
C
line
@ 0V
20
pF
R
2
,R
3
,R
4
, R
5
, R
6
, R
7
I = 50 mA
20%
50
R
10
, R
11
, R
12
, R
13
I = 50 A
30%
75
k
R
14
I = 200 A
30%
7
k
I
V
V
BR
V
RM
I
RM
I
RM
V
RM
V
BR
EMIF06-HMC01F2
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Figure 3: S21 (dB) attenuation measurement
Figure 4: Analog crosstalk measurement
Figure 5: ESD response to IEC61000-4-2
(+15kV air discharge) on one input V(in) and on
one output (Vout)
Figure 6: ESD response to IEC61000-4-2 (-15kV
air discharge) on one input V(in) and on one
output (Vout)
Figure 7: Junction capacitance versus reverse
voltage applied (typical values)
100.0k
1.0M
10.0M
100.0M
1.0G
- 50.00
- 40.00
- 30.00
- 20.00
- 10.00
0.00
dB
f/Hz
100.0k
1.0M
10.0M
100.0M
1.0G
- 80.00
- 70.00
- 60.00
- 50.00
- 40.00
- 30.00
- 20.00
- 10.00
0.00
dB
f/Hz
200ns/d
Input
10V/d
Output
10V/d
Input
10V/d
Output
10V/d
200ns/d
0
2
4
6
8
10
12
14
16
0
1
2
3
4
5
C
(pF)
LINE
V
(V)
LINE
Vosc=30mV
F=1MHz
Ta=25 C
Vosc=30mV
F=1MHz
Ta=25 C
EMIF06-HMC01F2
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Figure 8: Aplac model device structure
Figure 9: Aplac model parameters
R6
R5
R4
dat3
MMCdat2
MMCdat1
MMCdat0
dat2
dat1
dat0
Lbump
bulk
Rbump
MMCdat3
Lbump
Rbump
Lbump
Rbump
Lgnd
Rgnd
Lbump
Cgnd
Rbump
bulk
Lbump Rbump
Rsub
Cbump
B4
Vmmc_Vdd
R14
R13
R3
bulk
Rsub
Cbump
A4
bulk
MODEL = demif06_gnd
MODEL = demif06
Rsub
Cbump
A2
bulk
Rsub
Cbump
C4
bulk
Rsub
Cbump
C3
Lbump
Rbump
Lbump Rbump
MMCcmd
MMCclk
MMCdat0
MMCdat1
clk
MMCcmd
R12
cmd
R2
MMCclk
R11
clk
R10
MODEL = demif06
Lbump Rbump
R7
bulk
Rsub
Cbump
D4
bulk
Rsub
Cbump
D3
bulk
Rsub
Cbump
A1
bulk
Rsub Cbump
B1
MMCdat3
Lbump Rbump
bulk
Rsub Cbump
B2
bulk
Rsub
Lbump
Cbump
A3
Vmmc_Vdd
Rbump
bulk
Rsub Cbump
Lbump
Rbump
C1
Lbump
Rbump
dat2
Lbump
Rbump
bulk
Rsub Cbump
D1
Lbump
Rbump
dat3
MMCdat2
dat1
cmd
dat0
Variables
Cz 11pF
Cz_gnd 45pF
RS_gnd 480m
Ls 950pH
Rs 150m
Rbump 100m
Lbump 50pH
Cbump 0.15pF
Lgnd 50pH
Rgnd 100m
Cgnd 0.15pF
Variables
R2 50
R3 50
R4 50
R5 50
R6 50
R7 50
R10 75k
R11 75k
R12 75k
R13 75k
R14 7k
Rsub 100m
demif06_gnd
BV=14
IBV=1m
CJO=Cz_gnd
M=0.31
RS=RS_gnd
VJ=0.6
TT=100n
demif06
BV=14
IBV=1m
CJO=Cz
M=0.31
RS=1
VJ=0.6
TT=100n
EMIF06-HMC01F2
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Figure 10: Ordering Information Scheme
Figure 11: FLIP-CHIP Package Mechanical Data
Figure 12: Foot Print Recommendations
Figure 13: Marking
EMIF yy - xxx zz Fx
EMI Filter
Number of lines
Information
Package
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
F = Flip-Chip
x
= 1: 500m, Bump = 315m
= 2: Leadfree Pitch = 500m, Bump = 315m
= 3: Leadfree Pitch = 400m, Bump = 250m
1.92mm 50m
1.92mm 50m
315m 50
500m 10
500m 10
650m 65
Copper pad Diameter :
250m recommended , 300m max
Solder stencil opening : 330m
Solder mask opening recommendation :
340m min for 315m copper pad diameter
365
365
240
40
220
x
y
x
w
z
w
All dimensions in m
E
Dot, ST logo
xx = marking
yww = datecode
(y = year
ww = week)
z = packaging location
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