ESM2012DV
NPN DARLINGTON POWER MODULE
s
HIGH CURRENT POWER BIPOLAR MODULE
s
VERY LOW R
th
JUNCTION TO CASE
s
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s
ULTRAFAST FREEWHEELING DIODE
s
ISOLATED CASE (2500V RMS)
s
EASY TO MOUNT
s
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s
MOTOR CONTROL
s
UPS
s
DC/DC & DC/AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
September 1997
ISOTOP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parame ter
Value
Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -5 V)
150
V
V
CEO(sus)
Collector-Emitter Voltage (I
B
= 0)
120
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
120
A
I
CM
Collector Peak Current (t
p
= 10 ms)
180
A
I
B
Base Current
2
A
I
BM
Base Peak Current (t
p
= 10 ms)
4
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
175
W
T
stg
Storage Temperature
-55 to 150
o
C
T
j
Max. Ope ra ting Ju nction Temperature
150
o
C
V
I SO
Insulation Withstand Voltage (AC-RMS)
2500
o
C
1/8
THERMAL DATA
R
thj-ca se
R
thj-ca se
R
t hc-h
Thermal Resistance Ju nction- case (transistor)
Max
Thermal Resistance Ju nction- case (diode)
Max
Thermal Resistance Case-heatsin k With Conductive
Grease Applied
Max
0.7
0.9
0.05
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
#
Collecto r Cu t-of f
Current (R
BE
= 5
)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1. 5
10
mA
mA
I
CEV
#
Collecto r Cu t-of f
Current (V
BE
= -5V)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1
7
mA
mA
I
EBO
#
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(SUS)
* Collecto r-Emitter
Sustaining Voltage
I
C
= 5 A
L = 15 mH
V
c lamp
= 125 V
125
V
h
FE
DC Current Gain
I
C
= 100 A
V
CE
= 5 V
1200
V
CE(sat )
Collecto r-Emitter
Satu ration Vo ltage
I
C
= 70 A
I
B
= 0.25 A
I
C
= 70 A
I
B
= 0.25 A
T
j
= 100
o
C
I
C
= 100 A
I
B
= 1 A
I
C
= 100 A
I
B
= 1 A
T
j
= 100
o
C
1.25
1.35
1.5
1.65
1. 5
2
V
V
V
V
V
BE( sat)
Base-Emitter
Satu ration Vo ltage
I
C
= 100 A
I
B
= 1 A
I
C
= 100 A
I
B
= 1 A
T
j
= 100
o
C
2.3
2.35
3
V
V
di
C
/dt
Rate of Rise of
On-state Collector
V
CC
= 9 0 V
R
C
= 0
t
p
= 3
s
I
B1
= 0.5 A
T
j
= 100
o
C
200
230
A/
s
V
CE
(3
s)
Colle cto r-Emitter
Dynamic Voltage
V
CC
= 90 V
R
C
= 1.3
I
B1
= 0.5 A
T
j
= 100
o
C
2
3
V
V
CE
(5
s)
Collector-Emitte r
Dynamic Voltage
V
CC
= 90 V
R
C
= 1.3
I
B1
= 0.5 A
T
j
= 100
o
C
1.8
2. 5
V
t
s
t
f
t
c
Storage Time
Fall Time
Cross-over Time
I
C
= 70 A
V
CC
= 9 0 V
V
BB
= -5 V
R
BB
=
V
c lamp
= 125 V
I
B1
= 0.25 A
L = 60
H
T
j
= 1 00
o
C
0.9
0.15
0.3
2
0. 3
0. 6
s
s
s
V
CEW
Maximu m Collector
Emitter Voltage
With ou t Snubber
I
CW off
= 120 A
I
B1
= 1A
V
BB
= -5 V
V
CC
= 90 V
L = 60
H
R
BB
= 1 .2 5
T
j
= 1 25
o
C
125
V
V
F
Diod e Forward Voltage I
F
= 100 A
T
j
= 1 00
o
C
0.92
1
V
I
RM
Reverse Recovery
Current
V
CC
= 1 25 V
I
F
= 100 A
di
F
/dt = -200 A/
s
L < 0.05
H
T
j
= 1 00
o
C
10
14
A
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
# See test circuits in databook introduction
To evaluate the conduction losses of the diode use the following equations:
V
F
= 0.66 + 0.0034 I
F
P = 0.66 I
F(AV)
+ 0.0034 I
2
F(RMS)
ESM2012DV
2/8
Safe Operating Areas
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedance
Collector-emitter Voltage Versus
base-emitter Resistance
Base-Emitter Saturation Voltage
ESM2012DV
3/8
Turn-on Switching Waveforms
Dc Current Gain
Typical V
F
Versus I
F
Peak Reverse Current Versus di
F
/dt
Turn-on Switching Test Circuit
ESM2012DV
5/8
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