ESM4045DV
NPN DARLINGTON POWER MODULE
s
HIGH CURRENT POWER BIPOLAR MODULE
s
VERY LOW R
th
JUNCTION CASE
s
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s
ULTRAFAST FREEWHEELING DIODE
s
ISOLATED CASE (2500V RMS)
s
EASY TO MOUNT
s
LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
DC/DC & DC/AC CONVERTERS
s
WELDING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
July 1997
ISOTOP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CEV
Collect or-Emitt er Voltage (V
BE
= -5 V)
600
V
V
CEO(sus)
Collect or-Emitt er Voltage (I
B
= 0)
450
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
7
V
I
C
Collect or Current
42
A
I
CM
Collect or Peak Current (t
p
= 10 ms)
63
A
I
B
Base Current
4
A
I
BM
Base Peak Current (t
p
= 10 ms)
8
A
P
t ot
Total Dissipation at T
c
= 25
o
C
150
W
T
stg
St orage Temperature
-55 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
V
ISO
Insulation W it hst and Volt age (AC-RMS)
2500
o
C
1/8
THERMAL DATA
R
t hj-ca se
R
t hj-ca se
R
thc -h
Thermal Resistance Junction-case (t ransistor)
Max
Thermal Resistance Junction-case (diode)
Max
Thermal Resistance Case-heats ink With Conductive
Grease Applied
Max
0.83
1.5
0.05
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CER
#
Collect or Cut-off
Current (R
BE
= 5
)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1.5
20
mA
mA
I
CEV
#
Collect or Cut-off
Current (V
BE
= -5)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1
13
mA
mA
I
EBO
#
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO (SUS)
* Collect or-Emitter
Sustaining Voltage
I
C
= 0. 2 A
L = 25 mH
V
c la mp
= 450 V
450
V
h
FE
DC Current G ain
I
C
= 35 A
V
CE
= 5 V
220
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 25 A
I
B
= 0.5 A
I
C
= 25 A
I
B
= 0.5 A
T
j
= 100
o
C
I
C
= 35 A
I
B
= 2 A
I
C
= 35 A
I
B
= 2 A
T
j
= 100
o
C
1. 15
1.3
1.4
1.5
2
2
V
V
V
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 35 A
I
B
= 2 A
I
C
= 35 A
I
B
= 2 A
T
j
= 100
o
C
2.3
2.3
3
V
V
di
C
/dt
Rate of Rise of
On-stat e Collector
V
CC
= 300 V
R
C
= 0
t
p
= 3
s
I
B1
= 0.75 A
T
j
= 100
o
C
200
250
A/
s
V
CE
(3
s) Collect or-Emitter
Dynamic Voltage
V
CC
= 300 V
R
C
= 12
I
B1
= 0.75 A
T
j
= 100
o
C
4.5
8
V
V
CE
(5
s) Collect or-Emitter
Dynamic Voltage
V
CC
= 300 V
R
C
= 12
I
B1
= 0.75 A
T
j
= 100
o
C
2.5
4.5
V
t
s
t
f
t
c
St orage Time
Fall T ime
Cross-over T ime
I
C
= 25A
V
CC
= 50 V
V
BB
= -5 V
R
BB
= 0.6
V
c la mp
= 450 V
I
B1
= 0.5 A
L = 0.1 mH
T
j
= 100
o
C
3.2
0. 25
0. 75
5
0.5
1.5
s
s
s
V
CEW
Maximum Collect or
Emitt er Volt age
Without Snubber
I
CW off
= 42 A
I
B1
= 2 A
V
BB
= -5 V
V
CC
= 50 V
L = 0.06 mH
R
BB
= 0.6
T
j
= 125
o
C
450
V
V
F
Diode Forward Volt age
I
F
= 35 A
T
j
= 100
o
C
1.5
1.85
V
I
RM
Reverse Recovery
Current
V
CC
= 200 V
I
F
= 35 A
di
F
/dt = -200 A/
s
L < 0.05
H
T
j
= 100
o
C
20
24
A
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
To evaluate the conduction losses of the diode use the following equations:
V
F
= 1.5 + 0.001 I
F
P = 1.5 I
F(AV)
+ 0.001 I
2
F(RMS)
# See test circuits in databook introduction
ESM4045DV
2/8
Safe Operating Areas
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedance
Collector-emitter Voltage Versus
base-emitter Resistance
Base-Emitter Saturation Voltage
ESM4045DV
3/8
Turn-on Switching Waveforms
Dc Current Gain
Typical V
F
Versus I
F
Peak Reverse Current Versus di
F
/dt
Turn-on Switching Test Circuit
ESM4045DV
5/8
PDF 
ZIP