ESM6045AV
NPN DARLINGTON POWER MODULE
s
HIGH CURRENT POWER BIPOLAR MODULE
s
VERY LOW R
th
JUNCTION CASE
s
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s
ISOLATED CASE (2500V RMS)
s
EASY TO MOUNT
s
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
WELDING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
September 1997
ISOTOP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parame ter
Value
Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -5 V)
1000
V
V
CEO(sus)
Collector-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
72
A
I
CM
Collector Peak Current (t
p
= 10 ms)
108
A
I
B
Base Current
8
A
I
BM
Base Peak Current (t
p
= 10 ms)
16
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
250
W
T
stg
Storage Temperature
-55 to 150
o
C
T
j
Max. Ope ra ting Ju nction Temperature
150
o
C
V
I SO
Insulation Withstand Voltage (AC-RMS)
2500
o
C
1/7
THERMAL DATA
R
thj-ca se
R
t hc-h
Thermal Resistance Ju nction- case
Max
Thermal Resistance Case-heatsin k With Conductive
Grease Applied
Max
0.5
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
#
Collecto r Cu t-of f
Current (R
BE
= 5
)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1. 5
22
mA
mA
I
CEV
#
Collecto r Cu t-of f
Current (V
BE
= -5)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1
15
mA
mA
I
EBO
#
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(SUS)
* Collecto r-Emitter
Sustaining Voltage
I
C
= 0.2 A
L = 25 mH
V
c lamp
= 450 V
450
V
h
FE
DC Current Gain
I
C
= 60 A
V
CE
= 5 V
150
V
CE(sat )
Collecto r-Emitter
Satu ration Vo ltage
I
C
= 50 A
I
B
= 1 A
I
C
= 50 A
I
B
= 1 A
T
j
= 100
o
C
I
C
= 60 A
I
B
= 2 .4 A
I
C
= 60 A
I
B
= 2 .4 A
T
j
= 100
o
C
1.2
1.6
1.3
1.55
2
2
V
V
V
V
V
BE( sat)
Base-Emitter
Satu ration Vo ltage
I
C
= 60 A
I
B
= 2 .4 A
I
C
= 60 A
I
B
= 2 .4 A
T
j
= 100
o
C
2.1
2.15
3
V
V
di
C
/dt
Rate of Rise of
On-state Collector
V
CC
= 3 00 V
R
C
= 0
t
p
= 3
s
I
B1
= 3.6 A
T
j
= 100
o
C
450
500
A/
s
V
CE
(3
s)
Colle cto r-Emitter
Dynamic Voltage
V
CC
= 300 V
R
C
= 5
I
B1
= 3.6 A
T
j
= 100
o
C
4
7
V
V
CE
(5
s)
Collector-Emitte r
Dynamic Voltage
V
CC
= 300 V
R
C
= 5
I
B1
= 3.6 A
T
j
= 100
o
C
2.5
4
V
t
s
t
f
t
c
Storage Time
Fall Time
Cross-over Time
I
C
= 60 A
V
CC
= 50 V
V
BB
= -5 V
R
BB
= 0.3
V
c lamp
= 450 V
I
B1
= 2.4 A
L = 0. 04 mH
T
j
= 100
o
C
4.6
0.4
1.2
6
0. 6
2
s
s
s
V
CEW
Maximu m Collector
Emitter Voltage
With ou t Snubber
I
CW off
= 72 A
I
B1
= 2.4 A
V
BB
= -5 V
V
CC
= 5 0 V
L = 35
H
R
BB
= 0.3
T
j
= 1 25
o
C
450
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
# See test circuits in databook introduction
ESM6045AV
2/7
Safe Operating Areas
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedance
Collector-emitter Voltage Versus
base-emitter Resistance
Base-Emitter Saturation Voltage
ESM6045AV
3/7
Reverse Biased SOA
Reverse Biased AOA
Switching Times Inductive Load
Foward Biased SOA
Forward Biased AOA
Switching Times Inductive Load Versus
Temperature
ESM6045AV
4/7
Dc Current Gain
Turn-on Switching Test Circuit
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
Turn-off Switching Waveforms
ESM6045AV
5/7
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.466
0.480
B
8.9
9.1
0.350
0.358
C
1.95
2.05
0.076
0.080
D
0.75
0.85
0.029
0.033
E
12.6
12.8
0.496
0.503
F
25.15
25.5
0.990
1.003
G
31.5
31.7
1.240
1.248
H
4
0.157
J
4.1
4.3
0.161
0.169
K
14.9
15.1
0.586
0.594
L
30.1
30.3
1.185
1.193
M
37.8
38.2
1.488
1.503
N
4
0.157
O
7.8
8.2
0.307
0.322
B
E
H
O
N
J
K
L
M
F
A
C
G
D
ISOTOP MECHANICAL DATA
ESM6045AV
6/7
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
ESM6045AV
7/7
PDF 
ZIP