ChipFind - документация

Электронный компонент: HCF4008M013TR

Скачать:  PDF   ZIP
1/9
September 2001
s
HIGH SPEED OPERATION :
SUM IN TO SUM OUT 160ns (Typ.)
CARRY IN TO CARRY OUT 50ns (Typ.)
at V
DD
= 10V , C
L
= 50pF
s
4 SUM OUTPUTS PLUS PARALLEL
LOOK-AHEAD CARRY OUTPUT
s
QUIESCENT CURRENT SPECIFIED UP TO
20V
s
5V, 10V AND 15V PARAMETRIC RATINGS
s
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25C
s
100% TESTED FOR QUIESCENT CURRENT
s
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4008B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4008B consists of four full adder stages
with fast look ahead carry provision from stage to
stage. Circuitry is included to provide a fast
"parallel carry out" to permit high speed operation
in arithmetic sections using several HCF4008B's.
HCF4008B inputs include the four sum bits, S1 to
S4. In addition to the high speed "parallel carry
out" which may be utilized at a succeeding
HCF4008B section.
HCF4008B
4 BIT FULL ADDER WITH PARALLEL CARRY OUTPUT
PIN CONNECTION
ORDER CODES
PACKAGE
TUBE
T & R
DIP
HCF4008BEY
SOP
HCF4008BM1
HCF4008M013TR
DIP
SOP
HCF4008B
2/9
IINPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X : Don't Care
LOGIC DIAGRAM
PIN No
SYMBOL
NAME AND FUNCTION
7, 5, 3, 1
A1 to A4
A Operand Inputs
6, 4, 2, 15
B1 to B4
B Operand Inputs
10, 11, 12,
13
S1 to S4
Sum Outputs
9
CI
Carry In
14
CO
Carry Out
8
V
SS
Negative Supply Voltage
16
V
DD
Positive Supply Voltage
An
Bn
CI
CO
SUM
L
L
L
L
L
H
L
L
L
H
L
H
L
L
H
H
H
L
H
L
L
L
H
L
H
H
L
H
H
L
L
H
H
H
L
H
H
H
H
H
HCF4008B
3/9
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
-0.5 to +22
V
V
I
DC Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
10
mA
P
D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T
op
Operating Temperature
-55 to +125
C
T
stg
Storage Temperature
-65 to +150
C
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
3 to 20
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature
-55 to 125
C
HCF4008B
4/9
DC SPECIFICATIONS
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
Symbol
Parameter
Test Condition
Value
Unit
V
I
(V)
V
O
(V)
|I
O
|
(
A)
V
DD
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
I
L
Quiescent Current
0/5
5
0.04
5
150
150
A
0/10
10
0.04
10
300
300
0/15
15
0.04
20
600
600
0/20
20
0.08
100
3000
3000
V
OH
High Level Output
Voltage
0/5
<1
5
4.95
4.95
4.95
V
0/10
<1
10
9.95
9.95
9.95
0/15
<1
15
14.95
14.95
14.95
V
OL
Low Level Output
Voltage
5/0
<1
5
0.05
0.05
0.05
V
10/0
<1
10
0.05
0.05
0.05
15/0
<1
15
0.05
0.05
0.05
V
IH
High Level Input
Voltage
0.5/4.5
<1
5
3.5
3.5
3.5
V
1/9
<1
10
7
7
7
1.5/13.5
<1
15
11
11
11
V
IL
Low Level Input
Voltage
4.5/0.5
<1
5
1.5
1.5
1.5
V
9/1
<1
10
3
3
3
13.5/1.5
<1
15
4
4
4
I
OH
Output Drive
Current
0/5
2.5
<1
5
-1.36
-3.2
-1.1
-1.1
mA
0/5
4.6
<1
5
-0.44
-1
-0.36
-0.36
0/10
9.5
<1
10
-1.1
-2.6
-0.9
-0.9
0/15
13.5
<1
15
-3.0
-6.8
-2.4
-2.4
I
OL
Output Sink
Current
0/5
0.4
<1
5
0.44
1
0.36
0.36
mA
0/10
0.5
<1
10
1.1
2.6
0.9
0.9
0/15
1.5
<1
15
3.0
6.8
2.4
2.4
I
I
Input Leakage
Current
0/18
Any Input
18
10
-5
0.1
1
1
A
C
I
Input Capacitance
Any Input
5
7.5
pF
HCF4008B
5/9
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25C, C
L
= 50pF, R
L
= 200K
, t
r
= t
f
= 20 ns)
(*) Typical temperature coefficient for all V
DD
value is 0.3 %/C.
TYPICAL APPLICATION
SPEED CHARCTERISCTICS OF A 16 BIT-ADDER
NOTES : All "A" and "B" input bits occur at t = 0
All sums settled at t = 345ns
C
L
= 50pF, T
amb
= 25C , V
DD
- V
SS
= 10V
Symbol
Parameter
Test Condition
Value (*)
Unit
V
DD
(V)
Min.
Typ.
Max.
t
PLH
t
PHL
Propagation Delay Time
(SUM IN to SUM OUT)
5
400
800
ns
10
160
320
15
115
230
t
PLH
t
PHL
Propagation Delay Time
(CARRY IN to SUM OUT)
5
370
740
ns
10
155
310
15
115
230
t
PLH
t
PHL
Propagation Delay Time
(SUM IN to CARRY OUT)
5
200
400
ns
10
90
180
15
65
130
t
PLH
t
PHL
Propagation Delay Time
(CARRY IN to CARRY
OUT)
5
100
200
ns
10
50
100
15
40
80
t
THL
t
TLH
Transition Time (carry out
or decoded out lines)
5
100
200
ns
10
50
100
15
40
80
HCF4008B
6/9
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200K
R
T
= Z
OUT
of pulse generator (typically 50
)
HCF4008B
7/9
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
a1
0.51
0.020
B
0.77
1.65
0.030
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
17.78
0.700
F
7.1
0.280
I
5.1
0.201
L
3.3
0.130
Z
1.27
0.050
Plastic DIP-16 (0.25) MECHANICAL DATA
P001C
HCF4008B
8/9
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.2
0.003
0.007
a2
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45 (typ.)
D
9.8
10
0.385
0.393
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
8.89
0.350
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
0.62
0.024
S
8 (max.)
SO-16 MECHANICAL DATA
PO13H
HCF4008B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2001 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom
http://www.st.com
9/9