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July 2002
s
PROPAGATION DELAY TIME t
PD
= 40ns
(TYP.) at V
DD
= 10V C
L
= 50pF
s
HIGH TO LOW LEVEL LOGIC CONVERSION
s
MULTIPLEXER: 1 TO 6 OR 6 TO 1
s
HIGH "SINK" AND "SOURCE" CURRENT
CAPABILITY
s
QUIESCENT CURRENT SPECIFIED UP TO
20V
s
5V, 10V AND 15V PARAMETRIC RATINGS
s
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25C
s
100% TESTED FOR QUIESCENT CURRENT
s
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4009UB is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
It is an inverting Hex Buffer/Converter and can be
used as CMOS to TTL or DTL logic level
converters as current "sink" ot "source" drivers or
as multiplexer (1 to 6).
It is a preferred replacement of HCF4049UB in
buffer applications.
HCF4009UB
HEX BUFFER/CONVERTER (INVERTING)
PIN CONNECTION
ORDER CODES
PACKAGE
TUBE
T & R
DIP
HCF4009UBEY
SOP
HCF4009UBM1
HCF4009UM013TR
DIP
SOP
HCF4009UB
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INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
This device has High to Low level voltage conversion capability only
PIN No
SYMBOL
NAME AND FUNCTION
3, 5, 7, 9, 11,
14
A, B, C, D, E,
F
Data Inputs
2, 4, 6, 10,
12, 15
G, H, I, J, K,
L
Data Outputs
13 NC
Not
Connected
1
V
CC
Positive Supply Voltage
8
V
SS
Negative Supply Voltage
16
V
DD
Positive Supply Voltage
INPUTS
OUTPUTS
A, B, C, D,E, F
G, H, I, J, K, L
L
H
H
L
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
-0.5 to +22
V
V
CC
Supply Voltage
0.5 to V
DD
+ 0.5
V
V
I
DC Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
10
mA
P
D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T
op
Operating Temperature
-55 to +125
C
T
stg
Storage Temperature
-65 to +150
C
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
3 to 20
V
V
CC
Supply Voltage
0 to V
DD
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature
-55 to 125
C
HCF4009UB
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DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25C, C
L
= 50pF, R
L
= 200K
, t
r
= t
f
= 20 ns)
(*) Typical temperature coefficent for all V
DD
value is 0.3 %/C.
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200K
R
T
= Z
OUT
of pulse generator (typically 50
)
Symbol
Parameter
Test Condition
Value (*)
Unit
V
DD
(V)
V
I
(V)
V
CC
(V)
Min.
Typ.
Max.
t
TLH
Output Transition
Time
5
5
5
150
350
ns
10
10
10
75
15
15
15
15
55
110
t
THL
Output Transition
Time
5
5
5
35
70
ns
10
10
10
20
40
15
15
15
15
30
t
PLH
Propagation Delay
Time
5
5
5
70
140
ns
10
10
10
40
80
10
10
5
35
70
15
15
15
30
60
15
15
5
30
600
t
PHL
Propagation Delay
Time
5
5
5
30
60
ns
10
10
10
20
40
10
10
5
15
30
15
15
15
15
30
15
15
5
10
20
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