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Электронный компонент: HCF4014M013TR

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1/10
October 2002
s
MEDIUM SPEED OPERATION :
12 MHz (Typ.) At V
DD
= 10V
s
FULLY STATIC OPERATION
s
8 MASTER-SLAVE FLIP-FLOPS PLUS
OUTPUT BUFFERING AND CONTROL
GATING
s
QUIESCENT CURRENT SPECIFIED UP TO
20V
s
5V, 10V AND 15V PARAMETRIC RATINGS
s
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25C
s
100% TESTED FOR QUIESCENT CURRENT
s
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4014B is a monolithic integrated circuit
fabricated
in
Metal
Oxide
Semiconductor
technology available in DIP and SOP packages.
This device is an 8-stage parallel or serial input/
serial output register having common CLOCK and
PARALLEL/SERIAL CONTROL inputs, a single
SERIAL data input, and individual parallel "JAM"
inputs to each register stage. Each register stage
is a D-type, master-slave flip-flop in addition to an
output from stage 8, "Q" outputs are also available
from stages 6 and 7. Parallel as well as serial
entry is made into the register synchronously with
the positive clock line transition. In this device,
entry is controlled by the PARALLEL/SERIAL
CONTROL input. When the PARALLEL/SERIAL
CONTROL input is low, data is serially shifted into
the 8-stage register synchronously with the
positive transition of he clock line. When the
PARALLEL/SERIAL CONTROL input is high, data
is jammed into the 8-stage register via the parallel
input lines and synchronous with the positive
transition of the clock line.
HCF4014B
SYNCHRONOUS PARALLEL OR SERIAL IN/SERIAL OUT
8 - STAGE STATIC SHIFT REGISTER
PIN CONNECTION
ORDER CODES
PACKAGE
TUBE
T & R
DIP
HCF4014BEY
SOP
HCF4014BM1
HCF4014M013TR
DIP
SOP
HCF4014B
2/10
IINPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
LOGIC DIAGRAM
PIN No
SYMBOL
NAME AND FUNCTION
7, 6, 5, 4, 13,
14, 15, 1
PI1 to PI8
Parallel Input
11
SERIAL IN
Serial Input
9
PARALLEL/
SERIAL
CONTROL
Parallel/Serial Input Con-
trol
10
CLOCK
Clock Input
2, 3, 12
Q6, Q7, Q8
Buffered Outputs
8
V
SS
Negative Supply Voltage
16
V
DD
Positive Supply Voltage
CLOCK
SERIAL INPUT
PARALLEL/
SERIAL
CONTROL
PI - 1
PI - n
Q
1
(INTERNAL)
Q
n
X
1
0
0
0
0
X
1
1
0
1
0
X
1
0
1
0
1
X
1
1
1
1
1
0
0
X
X
0
Q
n
- 1
1
0
X
X
1
Q
n
- 1
X
X
X
X
Q
1
Q
n
HCF4014B
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ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
-0.5 to +22
V
V
I
DC Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
10
mA
P
D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T
op
Operating Temperature
-55 to +125
C
T
stg
Storage Temperature
-65 to +150
C
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
3 to 20
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature
-55 to 125
C
t
r
, t
f
Input Rise and Fall Time (PI-1 ... PI-8)
V
DD
= 5V
0 to 1000
s
HCF4014B
4/10
DC SPECIFICATIONS
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
Symbol
Parameter
Test Condition
Value
Unit
V
I
(V)
V
O
(V)
|I
O
|
(
A)
V
DD
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
I
L
Quiescent Current
0/5
5
0.04
5
150
150
A
0/10
10
0.04
10
300
300
0/15
15
0.04
20
600
600
0/20
20
0.08
100
3000
3000
V
OH
High Level Output
Voltage
0/5
<1
5
4.95
4.95
4.95
V
0/10
<1
10
9.95
9.95
9.95
0/15
<1
15
14.95
14.95
14.95
V
OL
Low Level Output
Voltage
5/0
<1
5
0.05
0.05
0.05
V
10/0
<1
10
0.05
0.05
0.05
15/0
<1
15
0.05
0.05
0.05
V
IH
High Level Input
Voltage
0.5/4.5
<1
5
3.5
3.5
3.5
V
1/9
<1
10
7
7
7
1.5/13.5
<1
15
11
11
11
V
IL
Low Level Input
Voltage
4.5/0.5
<1
5
1.5
1.5
1.5
V
9/1
<1
10
3
3
3
13.5/1.5
<1
15
4
4
4
I
OH
Output Drive
Current
0/5
2.5
<1
5
-1.36
-3.2
-1.1
-1.1
mA
0/5
4.6
<1
5
-0.44
-1
-0.36
-0.36
0/10
9.5
<1
10
-1.1
-2.6
-0.9
-0.9
0/15
13.5
<1
15
-3.0
-6.8
-2.4
-2.4
I
OL
Output Sink
Current
0/5
0.4
<1
5
0.44
1
0.36
0.36
mA
0/10
0.5
<1
10
1.1
2.6
0.9
0.9
0/15
1.5
<1
15
3.0
6.8
2.4
2.4
I
I
Input Leakage
Current
0/18
Any Input
18
10
-5
0.1
1
1
A
C
I
Input Capacitance
Any Input
5
7.5
pF
HCF4014B
5/10
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25C, C
L
= 50pF, R
L
= 200K
, t
r
= t
f
= 20 ns)
(*) Typical temperature coefficient for all V
DD
value is 0.3 %/C.
(1) If more than one unit is cascaded t
r
CL should be made less than or equal to the sum of the transition time and the fixed propagation delay
of the output of the driving stage of the estimated capacitive load.
Symbol
Parameter
Test Condition
Value (*)
Unit
V
DD
(V)
Min.
Typ.
Max.
CLOCKED OPERATION
t
PLH
t
PHL
Propagation Delay Time
5
160
320
ns
10
80
160
15
60
120
t
THL
t
TLH
Transition Time
5
100
200
ns
10
50
100
15
40
80
f
CL
(1)
Maximum Clock Input
Frequency
5
3
6
MHz
10
6
12
15
8.5
17
t
W
Clock Pulse Width
5
180
90
ns
10
80
40
15
50
25
t
r
, t
f
Clock Input Rise or Fall
Time
5
15
s
10
15
15
15
t
setup
Setup Time, serial Input
(ref to CL)
5
120
60
ns
10
80
40
15
60
30
t
setup
Setup Time, Parallel Inputs
(ref to CL)
5
80
40
ns
10
50
25
15
40
20
t
setup
Setup Time, Parallel/Serial
Control (ref to CL)
5
180
90
ns
10
80
40
15
60
30
t
hold
Hold Time, serial in,
parallel in, parallel /serial
control
5
0
ns
10
0
15
0