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September 2002
s
MEDIUM SPEED OPERATION - t
PHL
= t
PLH =
65ns (TYP.) at C
L
= 50pF and V
DD-
V
SS =
10V
s
LOW OUTPUT IMPEDANCE : 500
(TYP.) at
V
DD-
V
SS =
10V
s
QUIESCENT CURRENT SPECIFIED UP TO
20V
s
5V, 10V AND 15V PARAMETRIC RATINGS
s
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25C
s
100% TESTED FOR QUIESCENT CURRENT
s
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
HCF4030B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF4030B types consist of four indipendent
exclusive-OR gates integrated on a single
monolithic silicon chip. Each exclusive-OR gate
consists of four n-channel and four p-channel
enhancement-type transistors. All inputs and
outputs are protected against electrostatic effects.
HCF4030B
QUAD EXCLUSIVE-OR GATE
PIN CONNECTION
ORDER CODES
PACKAGE
TUBE
T & R
DIP
HCF4030BEY
SOP
HCF4030BM1
HCF4030M013TR
DIP
SOP
HCF4030B
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INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
PIN No
SYMBOL
NAME AND FUNCTION
2, 1, 5, 6, 8,
9, 12, 13
A, B, C, D, E,
F, G, H
Data Inputs
3, 4, 10, 11
J, K, L, M
Data Outputs
7
V
SS
Negative Supply Voltage
14
V
DD
Positive Supply Voltage
IN1
IN2
OUT
L
L
L
L
H
H
H
L
H
H
H
L
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
-0.5 to +22
V
V
I
DC Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
10
mA
P
D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T
op
Operating Temperature
-55 to +125
C
T
stg
Storage Temperature
-65 to +150
C
HCF4030B
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RECOMMENDED OPERATING CONDITIONS
DC SPECIFICATIONS
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25C, C
L
= 50pF, R
L
= 200K
, t
r
= t
f
= 20 ns)
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
3 to 20
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature
-55 to 125
C
Symbol
Parameter
Test Condition
Value
Unit
V
I
(V)
V
O
(V)
|I
O
|
(
A)
V
DD
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
I
L
Quiescent Current
0/5
5
0.02
4
4
30
A
0/10
10
0.02
8
8
60
0/15
15
0.02
16
16
120
0/20
20
0.04
20
20
600
V
OH
Output High
Voltage
0/5
<1
5
4.95
4.95
4.95
V
0/10
<1
10
9.95
9.95
9.95
0/15
<1
15
14.95
14.95
14.95
V
OL
Output Low Voltage
5/0
<1
5
0.05
0.05
0.05
V
10/0
<1
10
0.05
0.05
0.05
15/0
<1
15
0.05
0.05
0.05
V
IH
Input High Voltage
0.5/4.5
<1
5
3.5
3.5
3.5
V
1/9
<1
10
7
7
7
1.5/13.5
<1
15
11
11
11
V
IL
Input Low Voltage
4.5/0.5
<1
5
1.5
1.5
1.5
V
9/1
<1
10
3
3
3
13.5/1.5
<1
15
4
4
4
I
OH
Output Drive
Current
0/5
2.5
<1
5
-1.36
-3.2
-1.15
-1.1
mA
0/5
4.6
<1
5
-0.44
-1
-0.36
-0.36
0/10
9.5
<1
10
-1.1
-2.6
-0.9
-0.9
0/15
13.5
<1
15
-3.0
-6.8
-2.4
-2.4
I
OL
Output Sink
Current
0/5
0.4
<1
5
0.44
1
0.36
0.36
mA
0/10
0.5
<1
10
1.1
2.6
0.9
0.9
0/15
1.5
<1
15
3.0
6.8
2.4
2.4
I
I
Input Leakage
Current
0/18
Any Input
18
10
-5
0.1
1
1
A
C
I
Input Capacitance
Any Input
5
7.5
pF
Symbol
Parameter
Test Condition
Value (*)
Unit
V
DD
(V)
Min.
Typ.
Max.
t
PLH
t
PHL
Propagation Delay Time
5
140
280
ns
10
65
130
15
50
100
t
TLH
t
THL
Output Transition Time
5
100
200
ns
10
50
100
15
40
80
HCF4030B
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TYPICAL APPLICATION : EVEN PARITY-BIT GENERATOR
TYPICAL APPLICATION : EVEN PARITY-CHECKER
TYPICAL APPLICATION : ODD-PARITY-BIT GENERATOR
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