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March 2004
s
MEDIUM-SPEED OPERATION
t
PHL
= t
PLH
= 70ns (Typ.) at CL = 50 pF and
V
DD
= 10V
s
QUIESCENT CURRENT SPECIFIED UP TO
20V
s
5V, 10V AND 15V PARAMETRIC RATINGS
s
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25C
s
100% TESTED FOR QUIESCENT CURRENT
DESCRIPTION
The HCF4070B is a monolithic integrated circuit
fabricated
in
Metal
Oxide
Semiconductor
technology available in DIP and SOP packages.
The
HCF4070B
contain
four
independent
exclusive OR gates. This device provide the
system
designer
with
a
means
for
direct
implementation
of
the
exclusive-OR.
For
applications
as
logical comparators,
adders/
subtractors, parity generator and checkers.
HCF4070B
QUAD EXCLUSIVE OR GATE
PIN CONNECTION
ORDER CODES
PACKAGE
TUBE
T & R
DIP
HCF4070BEY
SOP
HCF4070BM1
HCF4070M013TR
DIP
SOP
HCF4070B
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INPUT EQUIVALENT CIRCUIT
LOGIC DIAGRAM
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
PIN N
SYMBOL
NAME AND FUNCTION
1, 5, 8, 12
A, C, E, G
Data Inputs
2, 6, 9, 13
B, D, F, H
Data inputs
3, 4, 10, 11
J, K, L, M
Data Outputs
7
V
SS
Negative Supply Voltage
14
V
DD
Positive Supply Voltage
INPUTS
OUTPUT
A, C, E, G
B, D, F, H
J, K, L, M
L
L
L
L
H
H
H
L
H
H
H
L
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
-0.5 to +22
V
V
I
DC Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
10
mA
P
D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T
op
Operating Temperature
-55 to +125
C
T
stg
Storage Temperature
-65 to +150
C
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
3 to 20
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature
-55 to 125
C
HCF4070B
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DC SPECIFICATIONS
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25C, C
L
= 50pF, R
L
= 200K
, t
r
= t
f
= 20 ns)
(*) Typical temperature coefficient for all V
DD
value is 0.3%/C.
Symbol
Parameter
Test Condition
Value
Unit
V
I
(V)
V
O
(V)
|I
O
|
(
A)
V
DD
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
I
L
Quiescent Current
0/5
5
0.02
1
30
30
A
0/10
10
0.02
2
60
60
0/15
15
0.02
4
120
120
0/20
20
0.04
20
600
600
V
OH
High Level Output
Voltage
0/5
<1
5
4.95
4.95
4.95
V
0/10
<1
10
9.95
9.95
9.95
0/15
<1
15
14.95
14.95
14.95
V
OL
Low Level Output
Voltage
5/0
<1
5
0.05
0.05
0.05
V
10/0
<1
10
0.05
0.05
0.05
15/0
<1
15
0.05
0.05
0.05
V
IH
High Level Input
Voltage
0.5/4.5
<1
5
3.5
3.5
3.5
V
1/9
<1
10
7
7
7
1.5/13.5
<1
15
11
11
11
V
IL
Low Level Input
Voltage
4.5/0.5
<1
5
1.5
1.5
1.5
V
9/1
<1
10
3
3
3
13.5/1.5
<1
15
4
4
4
I
OH
Output Drive
Current
0/5
2.5
<1
5
-1.36
-3.2
-1.15
-1.1
mA
0/5
4.6
<1
5
-0.44
-1
-0.36
-0.36
0/10
9.5
<1
10
-1.1
-2.6
-0.9
-0.9
0/15
13.5
<1
15
-3.0
-6.8
-2.4
-2.4
I
OL
Output Sink
Current
0/5
0.4
<1
5
0.44
1
0.36
0.36
mA
0/10
0.5
<1
10
1.1
2.6
0.9
0.9
0/15
1.5
<1
15
3.0
6.8
2.4
2.4
I
I
Input Leakage
Current
0/18
Any Input
18
10
-5
0.1
1
1
A
C
I
Input Capacitance
Any Input
5
7.5
pF
Symbol
Parameter
Test Condition
Value (*)
Unit
V
DD
(V)
Min.
Typ.
Max.
t
PLH
t
PHL
Propagation Delay Time
5
140
280
ns
10
70
130
15
50
100
t
TLH
t
THL
Output Transition Time
5
100
200
ns
10
50
100
15
40
80
HCF4070B
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TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200K
R
T
= Z
OUT
of pulse generator (typically 50
)
WAVEFORM: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
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