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September 2002
s
MEDIUM-SPEED OPERATION
t
PHL
= 90ns, t
PLH
= 125ns (Typ.) at 10V
s
INDIVIDUAL INHIBIT CONTROLS
s
QUIESCENT CURRENT SPECIFIED UP TO
20V
s
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
s
5V, 10V AND 15V PARAMETRIC RATINGS
s
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25C
s
100% TESTED FOR QUIESCENT CURRENT
s
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
HCF4085B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF4085B contains a pair of AND-OR INVERT
gates, each consisting of two 2-input AND gates
driving a 3-input NOR gate. Individual inhibit
controls are provided for both A-O-I gates.
HCF4085B
DUAL 2-WIDE 2-INPUT AND-OR INVERTER GATE
PIN CONNECTION
ORDER CODES
PACKAGE
TUBE
T & R
DIP
HCF4085BEY
SOP
HCF4085BM1
HCF4085M013TR
DIP
SOP
HCF4085B
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INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
PIN No
SYMBOL
NAME AND FUNCTION
1, 2, 12, 13
A1 to D1
Data Inputs
5, 6, 8, 9
A2 to D2
Data Inputs
10, 11
INHIBIT 1, 2 Inhibit Control Inputs
3, 4
E1, E2
Data Outputs
7
V
SS
Negative Supply Voltage
14
V
DD
Positive Supply Voltage
A
B
C
D
INHIBIT
OUT
X
X
X
X
H
L
H
H
X
X
L
L
X
X
H
H
L
L
ALL OTHER COMBINATIONS
H
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
-0.5 to +22
V
V
I
DC Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
10
mA
P
D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T
op
Operating Temperature
-55 to +125
C
T
stg
Storage Temperature
-65 to +150
C
HCF4085B
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RECOMMENDED OPERATING CONDITIONS
DC SPECIFICATIONS
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
3 to 20
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature
-55 to 125
C
Symbol
Parameter
Test Condition
Value
Unit
V
I
(V)
V
O
(V)
|I
O
|
(
A)
V
DD
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
I
L
Quiescent Current
0/5
5
0.02
1
30
30
A
0/10
10
0.02
2
60
60
0/15
15
0.02
4
120
120
0/20
20
0.04
20
600
600
V
OH
High Level Output
Voltage
0/5
<1
5
4.95
4.95
4.95
V
0/10
<1
10
9.95
9.95
9.95
0/15
<1
15
14.95
14.95
14.95
V
OL
Low Level Output
Voltage
5/0
<1
5
0.05
0.05
0.05
V
10/0
<1
10
0.05
0.05
0.05
15/0
<1
15
0.05
0.05
0.05
V
IH
High Level Input
Voltage
0.5/4.5
<1
5
3.5
3.5
3.5
V
1/9
<1
10
7
7
7
1.5/13.5
<1
15
11
11
11
V
IL
Low Level Input
Voltage
4.5/0.5
<1
5
1.5
1.5
1.5
V
9/1
<1
10
3
3
3
13.5/1.5
<1
15
4
4
4
I
OH
Output Drive
Current
0/5
2.5
<1
5
-1.36
-3.2
-1.15
-1.1
mA
0/5
4.6
<1
5
-0.44
-1
-0.36
-0.36
0/10
9.5
<1
10
-1.1
-2.6
-0.9
-0.9
0/15
13.5
<1
15
-3.0
-6.8
-2.4
-2.4
I
OL
Output Sink
Current
0/5
0.4
<1
5
0.44
1
0.36
0.36
mA
0/10
0.5
<1
10
1.1
2.6
0.9
0.9
0/15
1.5
<1
15
3.0
6.8
2.4
2.4
I
I
Input Leakage
Current
0/18
Any Input
18
10
-5
0.1
1
1
A
C
I
Input Capacitance
Any Input
5
7.5
pF
HCF4085B
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DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25C, C
L
= 50pF, R
L
= 200K
, t
r
= t
f
= 20 ns)
(*) Typical temperature coefficient for all V
DD
value is 0.3 %/C.
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200K
R
T
= Z
OUT
of pulse generator (typically 50
)
Symbol
Parameter
Test Condition
Value (*)
Unit
V
DD
(V)
Min.
Typ.
Max.
t
PHL
Propagation Delay Time
(DATA)
5
225
450
ns
10
90
180
15
65
130
t
PLH
Propagation Delay Time
(DATA)
5
310
620
ns
10
125
250
15
90
180
t
PHL
Propagation Delay Time
(INHIBIT)
5
150
300
ns
10
60
120
15
40
80
t
PLH
Propagation Delay Time
(INHIBIT)
5
250
500
ns
10
100
200
15
70
140
t
TLH
t
THL
Transition Time
5
100
200
ns
10
50
100
15
40
80
HCF4085B
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WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
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