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October 2002
s
MEDIUM SPEED OPERATION :
6MHz (Typ.) at 10V
s
POSITIVE -OR NEGATIVE- EDGE
TRIGGERING
s
SYNCHRONOUS INTERNAL CARRY
PROPAGATION
s
QUIESCENT CURRENT SPECIF. UP TO 20V
s
5V, 10V AND 15V PARAMETRIC RATINGS
s
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25C
s
100% TESTED FOR QUIESCENT CURRENT
s
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
HCF4518B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF4518B Dual BCD Up Counter consists of two
identical, internal 4 stage counters. The counter
stages are D-type Flip-Flops having
interchangeable Clock and Enable lines for
incrementing on either the positive-going or
negative going transitions. For single-unit
operations the Enable input is maintained High
and the counter advances on each positive going
transition of the Clock. The counters are cleared
by high levels on their Reset lines. The counter
can be cascaded in the ripple mode by connecting
Q4 to the enable input of the subsequent counter
while the clock input of the latter is held low.
HCF4518B
DUAL BCD UP COUNTER
PIN CONNECTION
ORDER CODES
PACKAGE
TUBE
T & R
DIP
HCF4518BEY
SOP
HCF4518BM1
HCF4518M013TR
DIP
SOP
HCF4518B
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ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
-0.5 to +22
V
V
I
DC Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
10
mA
P
D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T
op
Operating Temperature
-55 to +125
C
T
stg
Storage Temperature
-65 to +150
C
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
3 to 20
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature
-55 to 125
C