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December 2005
STATE-OF-THE-ART TECHNOLOGY:
DIFFUSED COLLECTOR "ENHANCED
GENERATION" EHVS1
WIDER RANGE OF OPTIMUM DRIVE
CONDITIONS
LESS SENSITIVE TO OPERATING
TEMPERATURE VARIATION
FULLY INSULATED POWER PACKAGE U.L.
COMPLIANT
APPLICATIONS
HORIZONTAL DEFLECTION OUTPUT FOR
DIGITAL TV, HDTV AND HIGH-END
MONITORS
DESCRIPTION
The device is manufactured using Diffused
Collector in Planar technology adopting "Enhance
High Voltage Structure" (EHVS1) developed to fit
High-Definition CRT displays.
The new HD product series show improved silicon
efficiency bringing updated performance to the
Horizontal Deflection stage.
Figure 1: Package
Figure 2: Internal Schematic Diagram
Table 1: Order Codes
ISOWATT218FX
Part Number
Marking
Package
Packaging
HD1750FX
HD1750FX
ISOWATT218FX
TUBE
HD1750FX
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH
DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS
Rev. 2
HD1750FX
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Table 2: Absolute Maximum Ratings
Table 3: Thermal Data
Table 4: Electrical Characteristics (T
case
= 25
o
C unless otherwise specified)
* Pulsed: Pulsed duration = 300
m
s, duty cycle
1.5
%.
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
1700
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
800
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
10
V
I
C
Collector Current
24
A
I
CM
Collector Peak Current (t
p
< 5ms)
36
A
I
B
Base Current
12
A
I
BM
Base Peak Current (t
p
< 5ms)
18
A
P
tot
Total Dissipation at T
C
= 25
o
C
75
W
V
ins
Insulation Withstand Voltage (RMS) from All Three Leads to
External Heatsink
2500
V
T
stg
Storage Temperature
-65 to 150
C
T
J
Max. Operating Junction Temperature
150
C
R
thj-case
Thermal Resistance Junction-Case Max
1.67
o
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off Current
(V
BE
= 0)
V
CE
= 1700 V
V
CE
= 1700 V T
C
= 125
o
C
0.2
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
10
A
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0 )
I
C
= 10 mA
800
V
V
EBO
Emitter-Base Voltage
(I
C
= 0 )
I
E
= 10 mA
10
V
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 12 A I
B
= 3 A
3
V
V
BE(sat)
*
Base-Emitter Saturation
Voltage
I
C
= 12 A I
B
= 3 A
0.95
1.5
V
h
FE
DC Current Gain
I
C
= 1 A V
CE
= 5 V
I
C
= 12 A V
CE
= 5 V
6.5
30
9.5
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 12 A f
h
= 31250 Hz
I
B(on)
= 1.9 A I
B(off)
= -8.1 A
V
CE(fly)
= 1320 V V
BE(off)
= -2.7 V
L
BB(off)
= 0.8 H
3.1
350
3.8
500
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 6.5 A f
h
= 100 kHz
I
B(on)
= 1.2 A I
B(off)
= -5.85 A
V
CE(fly)
= 1220 V V
BE(off)
= -2.7 V
L
BB(off)
= 0.25 H
1.7
180
2
250
s
ns
HD1750FX
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Figure 3: Safe Operating Area
Figure 4: Output Chatacterisctics
Figure 5: DC Current Gain
Figure 6: Derating Curve
Figure 7: Reverse Biased SOA
Figure 8: DC Current Gain
HD1750FX
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Figure 9: Collector-Emitter Saturation Voltage
Figure 10: Power Losses
Figure 11: Inductive Load Switching Time
Figure 12: Base-Emitter Saturation Voltage
Figure 13: Power Losses
Figure 14: Inductive Load Switching Time
HD1750FX
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Figure 15: Power Losses and Inductive Load Switching Test Circuit
Figure 16: Reverse Biased Safe Operating Area Test Circuit
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