IRF620
IRF620FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
s
TYPICAL R
DS(on)
= 0.55
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
INDUSTRIAL ACTUATORS
s
DC-DC
&
DC-AC
CONVERTERS
FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220
ISOWATT220
November 1996
TYPE
V
DSS
R
DS ( on)
I
D
IRF620
IRF620FI
200 V
200 V
< 0. 8
< 0. 8
6 A
4 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IRF620
I RF620FI
V
D S
Drain-source Voltage (V
GS
= 0)
200
V
V
DG R
Drain- gate Voltage (R
GS
= 20 k
)
200
V
V
GS
Gate-source Voltage
20
V
I
D
Drain Current (cont .) at T
c
= 25
o
C
6
4
A
I
D
Drain Current (cont .) at T
c
= 100
o
C
4
2
A
I
D M
(
)
Drain Current (pulsed)
24
24
A
P
tot
Total Dissipation at T
c
= 25
o
C
70
30
W
Derating Factor
0. 56
0. 24
W/
o
C
V
ISO
I nsulat ion Withstand Voltage (DC)
2000
V
T
stg
St orage Temperat ure
-65 to 150
o
C
T
j
Max. Operat ing Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
1
2
3
1/9
THERMAL DATA
TO-220
ISOWATT220
R
thj-cas e
Thermal Resist ance Junct ion-case
Max
1.79
4. 17
o
C/W
R
thj- amb
R
th c-s
T
l
Thermal Resist ance Junct ion-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
6
A
E
AS
Single Pulse Avalanche Energy
(st arting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 25 V)
20
mJ
E
AR
Repet itive Avalanche Energy
(pulse width limited by T
j
max,
< 1%)
5
mJ
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
< 1%)
4
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
( BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
G S
= 0
200
V
I
DS S
Zero Gate Volt age
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
T
c
= 125
o
C
10
100
A
A
I
G SS
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
G S(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2
3
4
V
R
DS( on)
St atic Drain-source On
Resist ance
V
GS
= 10V
I
D
= 3 A
0.55
0.8
I
D( on)
On St ate Drain Current
V
DS
> I
D( on)
x R
D S(on) max
V
G S
= 10 V
6
A
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D( on)
x R
D S(on) max
I
D
= 3 A
1.5
3.5
S
C
iss
C
oss
C
rss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
G S
= 0
460
90
20
600
120
30
pF
pF
pF
IRF620/FI
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off )
t
f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 100 V
I
D
= 3 A
R
G
= 50
V
GS
= 10 V
(see test circuit)
30
70
135
45
45
100
190
65
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 6 A
V
GS
= 10 V
V
DD
= Max Rat ing x 0.8
(see test circuit)
20
6
8
30
nC
nC
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
I
S D
I
SD M
(
)
Source-drain Current
Source-drain Current
(pulsed)
6
24
A
A
V
S D
(
)
Forward On Volt age
I
SD
= 6 A
V
GS
= 0
1.5
V
t
rr
Q
rr
Reverse Recovery
Time
Reverse Recovery
Charge
I
SD
= 6 A
di/ dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
170
1
ns
C
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
IRF620/FI
3/9
Thermal Impedance for TO-220
Derating Curve for TO-220
Output Characteristics
Thermal Impedance for ISOWATT220
Derating Curve for ISOWATT220
Transfer Characteristics
IRF620/FI
4/9
Transconductance
Static Drain-source On Resistance
Maximum Drain Current vs Temperature
Gate Charge vs Gate-source Voltage
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
IRF620/FI
5/9
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