HIGH VOLTAGE RAIL UP TO 600V
dV/dt IMMUNITY +- 50 V/nsec iN FULL TEM-
PERATURE RANGE
DRIVER CURRENT CAPABILITY:
400 mA SOURCE,
650 mA SINK
SWITCHING TIMES 50/30 nsec RISE/FALL
WITH 1nF LOAD
CMOS/TTL
SCHMITT
TRIGGER
INPUTS
WITH HYSTERESIS AND PULL DOWN
UNDER VOLTAGE LOCK OUT ON LOWER
AND UPPER DRIVING SECTION
INTEGRATED BOOTSTRAP DIODE
OUTPUTS IN PHASE WITH INPUTS
DESCRIPTION
The L6386 is an high-voltage device, manufac-
tured with the BCD "OFF-LINE" technology. It has
a Driver structure that enables to drive inde-
pendent referenced Channel Power MOS or
IGBT. The Upper (Floating) Section is enabled to
work with voltage Rail up to 600V. The Logic In-
puts are CMOS/TTL compatible for ease of inter-
facing with controlling devices.
July 1999
LOGIC
UV
DETECTION
LEVEL
SHIFTER
UV
DETECTION
R
R
S
V
CC
LVG
DRIVER
V
CC
HIN
SD
HVG
DRIVER
HVG
H.V.
TO LOAD
OUT
LVG
PGND
D97IN520D
LIN
DIAG
VREF
+
-
BOOTSTRAP DRIVER
Vboot
CIN
C
BOOT
SGND
5
7
6
8
9
12
13
14
1
2
3
4
BLOCK DIAGRAM
SO14
DIP14
ORDERING NUMBERS:
L6386D
L6386
L6386
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
1/10
THERMAL DATA
Symbol
Parameter
SO14
DIP14
Unit
R
th j-amb
Thermal Resistance Junction to Ambient
165
100
C/W
PIN DESCRIPTION
N.
Name
Type
Fun ction
1
LIN
I
Lower Driver Logic Input
2
SD (*)
I
Shut Down Logic Input
3
HIN
I
Upper Driver Logic Input
4
VCC
I
Low Voltage Supply
5
DIAG
O
Open Drain Diagnostic Output
6
CIN
I
Comparator Input
7
SGND
Ground
8
PGND
Power Ground
9
LVG (*)
O
Low Side Driver Output
10, 11
N.C.
Not Connected
12
OUT
O
Upper Driver Floating Driver
13
HVG (*)
O
High Side Driver Output
14
Vboot
Bootstrapped Supply Voltage
(*) The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA), with VCC >3V. This allows to omit the "bleeder" resistor connected
between the gate and the source of the external MOSFET normally used to hold the pin low; the gate driver assures low impedance also
in SD condition.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Vout
Output Voltage
-3 to Vboot - 18
V
Vcc
Supply Voltage
- 0.3 to +18
V
Vboot
Floating Supply Voltage
-1 to 618
V
Vhvg
Upper Gate Output Voltage
- 1 to Vboot
V
Vlvg
Lower Gate Output Voltage
-0.3 to Vcc +0.3
V
Vi
Logic Input Voltage
-0.3 to Vcc +0.3
V
Vdiag
Open Drain Forced Voltage
-0.3 to Vcc +0.3
V
Vcin
Comparator Input Voltage
-0.3 to Vcc +0.3
V
dVout/dt
Allowed Output Slew Rate
50
V/ns
Ptot
Total Power Dissipation (Tj = 85
C)
750
mW
Tj
Junction Temperature
150
C
Ts
Storage Temperature
-50 to 150
C
Note: ESD immunity for pins 12, 13 and 14 is guaranteed up to 900V (Human Body Model)
LIN
SD
HIN
V
CC
DIAG
SGND
CIN
1
3
2
4
5
6
7
PGND
N.C.
LVG
N.C.
OUT
HVG
V
boot
14
13
12
11
10
8
9
D97IN521A
PIN CONNECTION
L6386
2/10
RECOMMENDED OPERATING CONDITIONS
Symbol
Pin
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Vout
12
Output Voltage
Note1
580
V
Vboot-
Vout
14
Floating Supply Voltage
Note1
17
V
fsw
Switching Frequency
HVG,LVG load CL = 1nF
400
kHz
Vcc
4
Supply Voltage
17
V
T
j
Junction Temperature
-45
125
C
Note 1: if the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V.
ELECTRICAL CHARACTERISTICS
AC Operation (Vcc = 15V; Tj = 25
C)
Symbol
Pin
Parameter
Test Condition
Min.
Typ.
Max.
Unit
ton
1.3
vs 9,
13
High/Low Side Driver Turn-On
Propagation Delay
Vout = 0V
110
150
ns
toff
High/Low Side Driver Turn-Off
Propagation Delay
Vout = 0V
105
150
ns
tsd
2 vs
9,13
Shut Down to High/Low Side
Propagation Delay
Vout = 0V
105
150
ns
tr
13,9
Rise Time
CL = 1000pF
50
ns
tf
13,9
Fall Time
CL = 1000pF
30
ns
DC Operation (Vcc = 15V; Tj = 25
C)
Symbol
Pin
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Low Supply Voltage Section
Vcc
4
Supply Voltage
17
V
Vccth1
Vcc UV Turn On Threshold
11.5
12
12.5
V
Vccth2
Vcc UV Turn Off Threshold
9.5
10
10.5
V
Vcchys
Vcc UV Hysteresis
2
V
Iqccu
Undervoltage Quiescent Supply Current
Vcc
11V
200
A
Iqcc
Quiescent Current
Vcc = 15V
250
320
A
Bootstrapped Supply Section
Vboot
14
Bootstrapped Supply Voltage
17
V
Vbth1
Vboot UV Turn On Threshold
10.7
11.9
12.9
V
Vbth2
Vboot UV Turn Off Threshold
8.8
9.9
10.7
V
Vbhys
Vboot UV Hysteresis
2
V
Iqboot
Vboot Quiescent Current
Vout = Vboot
200
A
Ilk
Leakage Current
Vout = Vboot = 600V
10
A
Rdson
Bootstrap Driver on Resistance (*)
Vcc
12.5V; Vin = 0V
125
Driving Buffers Section
Iso
9, 13
High/Low Side Driver Short Circuit
Source Current
VIN = Vih (tp < 10
s)
300
400
mA
Isi
High/Low Side Driver Short Circuit
Sink Current
500
650
mA
Logic Inputs
Vil
1,2,3
Low Level Logic Threshold Voltage
1.5
V
Vih
High Level Logic Threshold Voltage
3.6
V
Iih
High Level Logic Input Current
VIN = 15V
50
70
A
Iil
Low Level Logic Input Current
VIN = 0V
1
A
(*) R
DSON
is tested in the following way: R
DSON
=
(
V
CC
-
V
CBOOT1
)
- (
V
CC
-
V
CBOOT2
)
I
1
(
V
CC,
V
CBOOT1
) -
I
2
(
V
CC
,V
CBOOT2
)
where I
1
is pin 8 current when V
CBOOT
= V
CBOOT1
, I
2
when V
CBOOT
= V
CBOOT2
.
L6386
3/10
HIN
LIN
SD
HOUT
LOUT
V
REF
V
CIN
DIAG
Note: SD active condition is latched until next negative IN edge.
D97IN522A
Figure 1. Timing Waveforms
DC OPERATION (continued)
Symbol
Pin
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Sense Comparator
Vio
Input Offset Voltage
-10
10
mV
Iio
6
Input Bias Current
Vcin
0.5
0.2
A
Vol
2
Open Drain Low Level Output
Voltage, Iod = -2.5mA
0.8
V
Vref
Comparator Reference voltage
0.460
0.5
0.540
V
For both high and low side buffers @25
C Tamb
0
1
2
3
4
5
C (nF)
0
50
100
150
200
250
time
(nsec)
Tr
D99IN1054
Tf
Figure 2. Typical Rise and Fall Times vs.
Load Capacitance
0
2
4
6
8
10
12
14
16 V
S
(V)
10
10
2
10
3
10
4
Iq
(
A)
D99IN1057
Figure 3. Quiescent Current vs. Supply
Voltage
L6386
4/10
BOOTSTRAP DRIVER
A bootstrap circuitry is needed to supply the high
voltage section. This function is normally accom-
plished by a high voltage fast recovery diode (fig.
4a). In the L6386 a patented integrated structure
replaces the external diode. It is realized by a
high voltage DMOS, driven synchronously with
the low side driver (LVG), with in series a diode,
as shown in fig. 4b
An internal charge pump (fig. 4b) provides the
DMOS driving voltage .
The diode connected in series to the DMOS has
been added to avoid undesirable turn on of it.
CBOOT selection and charging:
To choose the proper C
BOOT
value the external
MOS can be seen as an equivalent capacitor.
This capacitor C
EXT
is related to the MOS total
gate charge :
C
EXT
=
Q
gate
V
gate
The ratio between the capacitors C
EXT
and C
BOOT
is proportional to the cyclical voltage loss .
It has to be:
C
BOOT
>>>C
EXT
e.g.: if Q
gate
is 30nC and V
gate
is 10V, C
EXT
is
3nF. With
C
BOOT
= 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the
C
BOOT
selection has to take into account also the
leakage losses.
e.g.: HVG steady state consumption is lower than
200
A, so if HVG T
ON
is 5ms, C
BOOT
has to
supply 1
C to C
EXT
. This charge on a 1
F ca-
pacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advan-
tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if V
OUT
is close to
GND (or lower) and in the meanwhile the LVG is
on. The charging time (T
charge
) of the C
BOOT
is
the time in which both conditions are fulfilled and
it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop
due to
the DMOS R
DSON
(typical value: 125
Ohm). At low frequency this drop can be ne-
glected. Anyway
increasing the frequency
it
must be taken in to account.
The following equation is useful to compute the
drop on the bootstrap DMOS:
V
drop
=
I
charge
R
dson
V
drop
=
Q
gate
T
charge
R
dson
where Q
gate
is the gate charge of the external
power MOS, R
dson
is the on resistance of the
bootstrap DMOS, and T
charge
is the charging time
of the bootstrap capacitor.
For example: using a power MOS with a total
gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the T
charge
is 5
s. In fact:
V
drop
=
30nC
5
s
125
~
0.8V
V
drop
has to be taken into account when the volt-
age drop on C
BOOT
is calculated: if this drop is
too high, or the circuit topology doesn't allow a
sufficient charging time, an external diode can be
used.
TO LOAD
D99IN1056
H.V.
HVG
a
b
LVG
HVG
LVG
C
BOOT
TO LOAD
H.V.
C
BOOT
D
BOOT
V
BOOT
V
S
V
S
V
OUT
V
BOOT
V
OUT
Figure 4. Bootstrap Driver.
L6386
5/10
-45
-25
0
25
50
75
100
125
0
50
100
150
200
250
Ton
(ns)
Tj (
C)
Typ.
@ Vcc = 15V
Figure 5. Turn On Time vs. Temperature
-45
-25
0
25
50
75
100
125
7
8
9
10
11
12
13
14
15
Vbth1
(V)
Tj (
C)
Typ.
@ Vcc = 15V
Figure 8. V
BOOT
UV Turn On Threshold vs.
Temperature
-45
-25
0
25
50
75
100
125
0
50
100
150
200
250
Toff
(ns)
Tj (
C)
Typ.
@ Vcc = 15V
Figure 6. Turn Off Time vs. Temperature
-45
-25
0
25
50
75
100
125
7
8
9
10
11
12
13
14
15
Vbth2
(V)
Tj (
C)
Typ.
@ Vcc = 15V
Figure 9. V
BOOT
UV Turn Off Threshold vs.
Temperature
-45
-25
0
25
50
75
100
125
0
50
100
150
200
250
tsd
(ns0
Tj (
C)
Typ.
@ Vcc = 15V
Figure 7. Shutdown Time vs. Temperature
-45
-25
0
25
50
75
100
125
1
1.5
2
2.5
3
Vbhys
(V)
Tj (
C)
Typ.
@ Vcc = 15V
Figure 10. V
BOOT
UV Hysteresis
L6386
6/10
-45
-25
0
25
50
75
100
125
9
10
11
12
13
14
15
Vccth1(V)
Tj (
C)
Typ.
Figure 11. Vcc UV Turn On Threshold vs. Tem-
perature
-45
-25
0
25
50
75
100
125
7
8
9
10
11
12
Vccth2(V)
Tj (
C)
Typ.
Figure 12. Vcc UV Turn Off Threshold vs.
Temperature
-45
-25
0
25
50
75
100
125
0
200
400
600
800
1000
current
(mA)
Tj (
C)
Typ.
@ Vcc = 15V
Figure 14. Output Source Current vs. Tem-
perature
-45
-25
0
25
50
75
100
125
1
1.5
2
2.5
3
Vcchys
(V)
Tj (
C)
Typ.
Figure 13. Vcc UV Hysteresis vs. Tempera-
ture
-45
-25
0
25
50
75
100
125
0
200
400
600
800
1000
current
(mA)
Tj (
C)
Typ.
@ Vcc = 15V
Figure 15. Output Sink Current vs. Tempera-
ture
L6386
7/10
DIP14
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a1
0.51
0.020
B
1.39
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
3.3
0.130
Z
1.27
2.54
0.050
0.100
OUTLINE AND
MECHANICAL DATA
L6386
8/10
SO14
DIM.
mm
inch
MIN..
TYP.
MAX..
MIN..
TYP.. MAX..
A
1.75
0.069
a1
0.1
0.25
0.004
0.009
a2
1.6
0.063
b
0.35
0.46
0.014
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.020
c1
45
(typ.)
D (1)
8.55
8.75
0.336
0.344
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
7.62
0.300
F (1)
3.8
4
0.150
0.157
G
4.6
5.3
0.181
0.209
L
0.4
1.27
0.016
0.050
M
0.68
0.027
S
8
(1) D and F do not include mold flash or protrusions. Mold flash or
potrusions shall not exceed 0.15mm (.006inch).
OUTLINE AND
MECHANICAL DATA
(max.)
L6386
9/10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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L6386
10/10
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