WIDE BANDWIDTH
SINGLE J-FET OPERATIONAL AMPLIFIER
.
INTERNALLY ADJUSTABLE INPUT OFFSET
VOLTAGE
.
LOW POWER CONSUMPTION
.
WIDE COMMON-MODE (UP TO V
CC
+
) AND
DIFFERENTIAL VOLTAGE RANGE
.
LOW INPUT BIAS AND OFFSET CURRENT
.
OUTPUT SHORT-CIRCUIT PROTECTION
.
HIGH INPUT IMPEDANCE JFET INPUT
STAGE
.
INTERNAL FREQUENCY COMPENSATION
.
LATCH UP FREE OPERATION
.
HIGH SLEW RATE : 16V/
s (typ)
N
DIP8
(Plastic Package)
1
2
3
4
8
6
5
7
1 - Offset Null 1
2 - Inverting input
3 - Non-inverting input
4 - V
CC
-
5 - Offset Null 2
6 - Output
7 - V
CC
+
8 - N.C.
PIN CONNECTIONS (top view)
DESCRIPTION
These circuits are high speed JFET input single
operationalamplifiers incorporatingwell matched,high
voltage JFET and bipolar transistors in a monolithic
integrated circuit.
The devicesfeaturehigh slew rates, low input bias and
offset currents, and low offset voltage temperature
coefficient.
LF151
LF251 - LF351
October 1997
D
SO8
(Plastic Micropackage)
ORDER CODES
Part Number
Temperature
Package
N
D
LF351
0
o
C, +70
o
C
LF251
40
o
C, +105
o
C
LF151
55
o
C, +125
o
C
1/9
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage - (note 1)
18
V
V
i
Input Voltage - (note 3)
15
V
V
id
Differential Input Voltage - (note 2)
30
V
P
tot
Power Dissipation
680
mW
Output Short-circuit Duration - (note 4)
Infinite
T
oper
Operating Free Air Temperature Range
LF351
LF251
LF151
0 to 70
40 to 105
55 to 125
o
C
T
stg
Storage Temperature Range
65 to 150
o
C
Notes :
1. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the
zero reference level is the midpoint between V
CC
+
and V
CC
.
2. Differential voltages are at the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less.
4. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the
dissipation rating is not exceeded.
Output
Non-inverting
input
Inve rting
input
V
CC
V
CC
100
1.3k
30k
35k
35k
100
1.3k
8.2k
Offse t Null1
Offs e t Null2
100
200
SCHEMATIC DIAGRAM
N1
N2
LF35 1
10 0k
V
CC
INPUT OFFSET VOLTAGE NULL CIRCUITS
LF151 - LF251 - LF351
2/9
ELECTRICAL CHARACTERISTICS
V
CC
=
15V, T
amb
= 25
o
C (unless otherwise specified)
Symbol
Parameter
LF151 - LF251 - LF351
Unit
Min.
Typ.
Max.
V
io
Input Offset Voltage (R
S
= 10k
)
T
amb
= 25
o
C
T
min.
T
amb
T
max.
3
10
13
mV
DV
io
Input Offset Voltage Drift
10
V/
o
C
I
io
Input Offset Current *
T
amb
= 25
o
C
T
min.
T
amb
T
max.
5
100
4
pA
nA
I
ib
Input Bias Current *
T
amb
= 25
o
C
T
min.
T
amb
T
max.
20
200
20
pA
nA
A
vd
Large Signal Voltage Gain (R
L
= 2k
, V
O
=
10V)
T
amb
= 25
o
C
T
min.
T
amb
T
max.
50
25
200
V/mV
SVR
Supply Voltage Rejection Ratio (R
S
= 10k
)
T
amb
= 25
o
C
T
min.
T
amb
T
max.
80
80
86
dB
I
CC
Supply Current (no load)
T
amb
= 25
o
C
T
min.
T
amb
T
max.
1.4
3.4
3.4
mA
V
icm
Input Common Mode Voltage Range
11
+15
-12
V
CMR
Common Mode Rejection Ratio (R
S
= 10k
)
T
amb
= 25
o
C
T
min.
T
amb
T
max.
70
70
86
dB
Ios
Output Short-circuit Current
T
amb
= 25
o
C
T
min.
T
amb
T
max.
10
10
40
60
60
mA
V
OPP
Output Voltage Swing
T
amb
= 25
o
C
R
L
=
2k
R
L
= 10k
T
min.
T
amb
T
max.
R
L
=
2k
R
L
= 10k
10
12
10
12
12
13.5
V
SR
Slew Rate
(V
i
= 10V, R
L
= 2k
,
C
L
= 100pF, T
amb
= 25
o
C, unity gain)
12
16
V/
s
t
r
Rise Time
(V
i
= 20mV, R
L
= 2k
, C
L
= 100pF, T
amb
= 25
o
C, unity gain)
0.1
s
K
OV
Overshoot
(V
i
= 20mV, R
L
= 2k
, C
L
= 100pF, T
amb
= 25
o
C, unity gain)
10
%
GBP
Gain Bandwidth Product
(f = 100kHz, T
amb
= 25
o
C, V
in
= 10mV, R
L
= 2k
, C
L
=
100pF)
2.5
4
MHz
R
i
Input Resistance
10
12
THD
Total Harmonic Distortion (f = 1kHz, A
V
= 20dB, R
L
= 2k
,
C
L
= 100pF, T
amb
= 25
o
C, V
O
= 2V
PP
)
0.01
%
e
n
Equivalent Input Noise Voltage (f = 1kHz, R
s
= 100
)
15
nV
Hz
m
Phase Margin
45
Degrees
* The input bias currents are junction leakage currents which approximately double for every 10
o
C increase in the junction temperature.
LF151 - LF251 - LF351
3/9
30
20
25
15
10
5
0
MAXIMUM
PEAK-TO-PEAK
OUTPUT
VOLTAGE
(V)
100
1K
10K
100K
10M
1M
FREQUENCY (Hz)
Se e Figure 2
= 2k
R
L
= +25 C
T
amb
=
15V
V
CC
=
5V
V
CC
=
10V
V
CC
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS FREQUENCY
30
20
25
15
10
5
0
MAXIMUM
PEAK-TO-PEAK
OUTPUT
VOLTAGE
(V)
100
1K
10K
100K
10M
1M
FREQUENCY (Hz)
S e e F igure 2
= +25 C
T
amb
= 1 0k
R
L
V
CC
=
10V
V
CC
=
15V
V
CC
=
5V
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS FREQUENCY
30
25
20
15
10
5
0
MAXIMUM
PEAK-TO-PEAK
OUTPUT
VOLTAGE
(V)
FREQUENCY (Hz)
10k
40k
100k
400k
1M
4M
10M
T
amb
= +25 C
T
a mb
= -55 C
T
a mb
= +125 C
R
L
= 2k
Se e Figure 2
V
CC
=
15V
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS FREQUENCY
30
25
20
10
5
15
0
-75
-2 5
25
75
125
-5 0
0
50
-5 0
MAXIMUM
PEAK-TO-PEAK
OUTPUT
VOLTAGE
(V)
TE MP ER ATURE ( C)
V
CC
=
15V
S e e Figu re 2
R
L
= 10k
R
L
= 2k
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS FREE AIR TEMP.
30
25
20
15
10
5
0
MAXIMUM
PEAK-TO-PEAK
OUTPUT
VOLTAGE
(V)
0.1 0.2
0.4
0.7 1
2
4
7
10
T
a mb
= +25 C
V
CC
= 15V
S e e Figu re 2
LOAD RES ISTANCE (k
)
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS LOAD RESISTANCE
30
25
20
15
10
5
0
2
4
6
8
10
12
14
16
MAXIMUM
PEAK-TO-PEAK
OUTPUT
VOLTAGE
(V)
S UP P LY VOLTAGE (V)
R
L
= 10 k
T
a mb
= +25 C
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS SUPPLY VOLTAGE
LF151 - LF251 - LF351
4/9
1 00
1 0
1
0 .1
0 .0 1
INPUT
BIAS
CURRENT
(nA)
-50
-25
0
2 5
50
75
10 0
125
TEMPERATURE ( C)
V
CC
=
1 5V
INPUT BIAS CURRENT VERSUS
FREE AIR TEMPERATURE
1000
400
200
100
20
40
10
4
2
1
DIFFERENTIAL
VOLTAGE
AMPLIFICATION
(V/V)
-75
-50
-25
0
2 5
50
75
100 125
TEMPERATURE ( C )
R
L
= 2k
V
O
=
10V
V
CC
=
15V
LARGE SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION VERSUS
FREE AIR TEMPERATURE
FREQUENC Y (Hz)
DIFFERENTIAL
VOLTAGE
AMPLIFICATION
(V/V)
100
10
100
1K
10K
100K
10M
1M
1
DIFF ERENTIAL
VOLTAGE
AMPLIFICATION
(le ft s ca le )
180
90
0
R
= 2k
C
= 100pF
V
= 15V
T
= +125 C
L
L
CC
a mb
P HASE S HIFT
(right sca le)
LARGE SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION AND PHASE
SHIFT VERSUS FREQUENCY
250
225
200
175
150
100
75
50
25
0
TOTAL
POWER
DISSIPATION
(mV)
-75
-50
-25
0
25
50
75
1 00
125
TEMPERATURE ( C)
No s igna l
No loa d
+/-15V
V
CC
TOTAL POWER DISSIPATION VERSUS
FREE AIR TEMPERATURE
2.0
1 .8
1 .6
1.4
1.2
1.0
0 .8
0 .6
0 .4
0 .2
0
SUPPLY
CURRENT
(mA)
-75
-50
-25
0
25
50
75
10 0
125
TEMPERATURE ( C)
V
CC
=
15V
No signa l
No loa d
SUPPLY CURRENT PER AMPLIFIER
VERSUS FREE AIR TEMPERATURE
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
SUPPLY
CURRENT
(mA)
0
2
4
6
8
10
12
14
16
SUPPLY VOLTAGE (V)
No s igna l
No load
= +25 C
T
a mb
SUPPLY CURRENT PER AMPLIFIER
VERSUS SUPPLY VOLTAGE
LF151 - LF251 - LF351
5/9
89
88
87
86
85
84
-50
-25
0
25
50
75
100
125
COMMON
MODE
MODE
REJECTION
RATIO
(dB)
TEMPERATURE ( C)
83
-75
R
L
= 10 k
=
15V
V
CC
COMMON MODE REJECTION RATIO
VERSUS FREE AIR TEMPERATURE
6
4
2
0
-2
-4
0
0.5
1
1.5
2
2.5
3
3.5
INPUT
AND
OUTPUT
VOLTAGES
(V)
TIME (
s )
-6
=
15V
V
CC
R
L
= 2 k
= 100pF
C
L
T
a mb
= +25 C
O UTPUT
INPUT
VOLTAGE FOLLOWER LARGE SIGNAL
PULSE RESPONSE
t
r
28
24
20
16
12
8
4
0
-4
OUTPUT
VOLTAGE
(mV)
0
0.1
0.2
0.3 0.4
0.5
0.6 0.7
TIME (
s )
10%
90%
OVERSHOOT
R
L
= 2k
T
a mb
= +25 C
V
CC
= 15V
OUTPUT VOLTAGE VERSUS
ELAPSED TIME
70
60
50
40
30
20
10
0
EQUIVALENT
INPUT
NOISE
VOLTAGE
(nV/VHz)
10
40
100
400 1k
4k
10k
40k 100k
FREQUENC Y (Hz)
A
V
= 10
R
S
= 100
T
a mb
= +25 C
V
CC
=
15V
EQUIVALENT INPUT NOISE VOLTAGE
VERSUS FREQUENCY
1
0.4
0.1
0.04
0.01
0.004
0.001
TOTAL
HARMONIC
DISTORTION
(%)
100
400
1k
4k
10k
40k
100k
FREQUE NCY (Hz)
A
V
= 1
T
a mb
= +25 C
V
C C
= 15V
= 6V
V
O (rms)
A
V
= 1
T
a mb
= +25 C
= 6V
V
O (rms)
V
C C
=
15V
TOTAL HARMONIC DISTORTION VERSUS
FREQUENCY
LF151 - LF251 - LF351
6/9
-
e
I
LF351
eo
C
L
= 1 00 pF
R
= 2k
L
Figure 1 : Voltage Follower
PARAMETER MEASUREMENT INFORMATION
-
e
I
LF351
L
C
L
= 1 00 pF
1k
10k
eo
Figure 2 : Gain-of-10 Inverting Amplifier
-
LF351
1 k
R
F
= 100k
9.1k
3.3k
+15V
-15V
3.3k
C = 3.3
F
F
f
=
osc
1
F
2 x R
F
C
TYPICAL APPLICATION
(0.5Hz) SQUARE WAVE OSCILLATOR
LF351
-
R1
R2
C3
R3
C2
C1
C1 = C 2 =
C3
2
= 100pF
R1 = R2 = 2R3 = 1.5M
f =
o
1
= 1kHz
1
C
1
2 x R
HIGH Q NOTCH FILTER
LF151 - LF251 - LF351
7/9
PM-DIP8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP
Dimensions
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
3.32
0.131
a1
0.51
0.020
B
1.15
1.65
0.045
0.065
b
0.356
0.55
0.014
0.022
b1
0.204
0.304
0.008
0.012
D
10.92
0.430
E
7.95
9.75
0.313
0.384
e
2.54
0.100
e3
7.62
0.300
e4
7.62
0.300
F
6.6
0260
i
5.08
0.200
L
3.18
3.81
0.125
0.150
Z
1.52
0.060
DIP8.TBL
LF151 - LF251 - LF351
8/9
PM-SO8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
Dimensions
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
1.75
0.069
a1
0.1
0.25
0.004
0.010
a2
1.65
0.065
a3
0.65
0.85
0.026
0.033
b
0.35
0.48
0.014
0.019
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.020
c1
45
o
(typ.)
D
4.8
5.0
0.189
0.197
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.150
0.157
L
0.4
1.27
0.016
0.050
M
0.6
0.024
S
8
o
(max.)
SO8.TBL
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsi-
bility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON
Microelectronics. Specifications mentioned in this publ ication are subject to change without notice. This pub lication supersedes
and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical
components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics Printed in Italy All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdo m - U.S.A.
ORDER
CODE
:
LF151 - LF251 - LF351
9/9
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