M54HC00
M74HC00
December 1992
QUAD 2-INPUT NAND GATE
B1R
(Plastic Package)
ORDER CODES :
M54HC00F1R
M74HC00M1R
M74HC00B1R
M74HC00C1R
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
PIN CONNECTIONS (top view)
NC =
No Internal
Connection
INPUT AND OUTPUT EQUIVALENT CIRCUIT
.
HIGH SPEED
t
PD
= 6 ns (TYP.) AT V
CC
= 5 V
.
LOW POWER DISSIPATION
I
CC
= 1
A (MAX.) AT T
A
= 25
C
.
HIGH NOISE IMMUNITY
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
.
OUTPUTS DRIVE CAPABILITY
10 LSTTL LOADS
.
BALANCED PROPAGATION DELAYS
t
PLH
= t
PHL
.
WIDE OPERATING VOLTAGE RANGE
V
CC
(OPR) = 2 V TO 6 V
.
PIN AND FUNCTION COMPATIBLE
WITH 54/74LS00
.
SYMMETRICAL OUTPUT IMPEDANCE
I
OH
= I
OL
= 4 mA (MIN.)
The M54/74HC00 is a high speed CMOS QUAD 2-
INPUT NAND GATE fabricated in silicon gate
C
2
MOS technology. It has the same high speed per-
formance of LSTTL combined with true CMOS low
power consumption. The internal circuit is com-
posed of 3 stages including buffer output, which en-
ables high noise immunity and stable output. All
inputs are equipped with protection circuits against
static discharge and transient excess voltage.
DESCRIPTION
1/9
TRUTH TABLE
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
1, 4, 9, 12
1A to 4A
Data Inputs
2, 5, 10, 13
1B to 4B
Data Inputs
3, 6, 8, 11
1Y to 4Y
Data Outputs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
IEC LOGIC SYMBOL
SCHEMATIC CIRCUIT (Per Gate)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Source Sink Current Per Output Pin
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
P
D
Power Dissipation
500 (*)
mW
T
stg
Storage Temperature
-65 to +150
o
C
T
L
Lead Temperature (10 sec)
300
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
(*) 500 mW:
65
o
C derate to 300 mW by 10mW/
o
C: 65
o
C to 85
o
C
M54/M74HC00
2/9
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6 ns)
Symbol
Parameter
Test Conditions
Value
Unit
V
CC
(V)
T
A
= 25
o
C
54HC and 74HC
-40 to 85
o
C
74HC
-55 to 125
o
C
54HC
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
TLH
t
THL
Output Transition
Time
2.0
30
75
95
110
ns
4.5
8
15
19
22
6.0
7
13
16
19
t
PLH
t
PHL
Propagation
Delay Time
2.0
27
75
95
110
ns
4.5
9
15
19
22
6.0
8
13
16
19
C
IN
Input Capacitance
5
10
10
10
pF
C
PD
(*)
Power Dissipation
Capacitance
20
pF
(*) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the following equation. I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
/4 (per Gate)
SWITCHING CHARACTERISTICS TEST CIRCUIT
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST.
TEST CIRCUIT I
CC
(Opr.)
M54/M74HC00
4/9
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