M54HC10
M74HC10
December 1992
TRIPLE 3-INPUT NAND GATE
B1R
(Plastic Package)
ORDER CODES :
M54HC10F1R
M74HC10M1R
M74HC10B1R
M74HC10C1R
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
PIN CONNECTIONS (top view)
NC =
No Internal
Connection
INPUT AND OUTPUT EQUIVALENT CIRCUIT
.
HIGH SPEED
t
PD
= 6 ns (TYP.) AT V
CC
= 5 V
.
LOW POWER DISSIPATION
I
CC
= 1
A (MAX.) AT T
A
= 25
C
.
HIGH NOISE IMMUNITY
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
.
OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.
SYMMETRICAL OUTPUT IMPEDANCE
IOH
= I
OL
= 4 mA (MIN.)
.
BALANCED PROPAGATION DELAYS
t
PLH
= t
PHL
.
WIDE OPERATING VOLTAGE RANGE
V
CC
(OPR) = 2 V TO 6 V
.
PIN AND FUNCTION COMPATIBLE WITH
54/74LS10
The M54/74HC10 is a high speed CMOS TRIPLE
3-INPUT NAND GATE fabricated with silicon gate
C
2
MOS technology.
It has the same high speed performance of LSTTL
combined with true CMOS low power consumption.
The internal circuit is composed of 3 stages includ-
ing buffer output, which enables high noise im-
munity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess volt-
age.
DESCRIPTION
1/9
TRUTH TABLE
A
B
C
Y
L
X
X
H
X
L
X
H
X
X
L
H
H
H
H
L
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
1, 3, 9
1A to 3A
Data Inputs
2, 4, 10
1B to 3B
Data Inputs
13, 5, 11
1C to 3C
Data Inputs
12, 6, 8
1Y to 3Y
Data Outputs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
IEC LOGIC SYMBOL
SCHEMATIC CIRCUIT (Per Gate)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Source Sink Current Per Output Pin
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
P
D
Power Dissipation
500 (*)
mW
T
stg
Storage Temperature
-65 to +150
o
C
T
L
Lead Temperature (10 sec)
300
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
(*) 500 mW:
65
o
C derate to 300 mW by 10mW/
o
C: 65
o
C to 85
o
C
M54/M74HC10
2/9
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6 ns)
Symbol
Parameter
Test Conditions
Value
Unit
V
CC
(V)
T
A
= 25
o
C
54HC and 74HC
-40 to 85
o
C
74HC
-55 to 125
o
C
54HC
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
TLH
t
THL
Output Transition
Time
2.0
30
75
95
110
ns
4.5
8
15
19
22
6.0
7
13
16
19
t
PLH
t
PHL
Propagation
Delay Time
2.0
27
75
95
110
ns
4.5
9
15
19
22
6.0
8
13
16
19
C
IN
Input Capacitance
5
10
10
10
pF
C
PD
(*)
Power Dissipation
Capacitance
23
pF
(*) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the following equation. I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
/3 (per Gate)
SWITCHING CHARACTERISTICS TEST CIRCUIT
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST.
TEST CIRCUIT I
CC
(Opr.)
M54/M74HC10
4/9
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