1/10
August 2001
s
HIGH SPEED:
t
PD
= 8ns (TYP.) at V
CC
= 6V
s
LOW POWER DISSIPATION:
I
CC
= 4
A(MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 6mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 125
DESCRIPTION
The M74HC125 is an high speed CMOS QUAD
BUFFER (3-STATE) fabricated with silicon gate
C
2
MOS technology.
The device requires the 3-STATE control input G
to be set high to place the output into the high
impedance state.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HC125
QUAD BUS BUFFER (3-STATE)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
TUBE
T & R
DIP
M74HC125B1R
SOP
M74HC125M1R
M74HC125RM13TR
TSSOP
M74HC125TTR
TSSOP
DIP
SOP
M74HC125
2/10
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
C; derate to 300mW by 10mW/
C from 65
C to 85
C
RECOMMENDED OPERATING CONDITIONS
PIN No
SYMBOL
NAME AND FUNCTION
1, 4, 10, 13
1G TO 4G
Output Enable Input
2, 5, 9, 12
1A TO 4A
Data Inputs
3, 6, 8, 11
1Y TO 4Y
Data Outputs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
A
G
Y
X
H
Z
L
L
L
H
L
H
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
35
mA
I
CC
or I
GND
DC V
CC
or Ground Current
70
mA
P
D
Power Dissipation
500(*)
mW
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 6
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
t
r
, t
f
Input Rise and Fall Time
V
CC
= 2.0V
0 to 1000
ns
V
CC
= 4.5V
0 to 500
ns
V
CC
= 6.0V
0 to 400
ns
M74HC125
3/10
DC SPECIFICATIONS
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
V
OH
High Level Output
Voltage
2.0
I
O
=-20
A
1.9
2.0
1.9
1.9
V
4.5
I
O
=-20
A
4.4
4.5
4.4
4.4
6.0
I
O
=-20
A
5.9
6.0
5.9
5.9
4.5
I
O
=-6.0 mA
4.18
4.31
4.13
4.10
6.0
I
O
=-7.8 mA
5.68
5.8
5.63
5.60
V
OL
Low Level Output
Voltage
2.0
I
O
=20
A
0.0
0.1
0.1
0.1
V
4.5
I
O
=20
A
0.0
0.1
0.1
0.1
6.0
I
O
=20
A
0.0
0.1
0.1
0.1
4.5
I
O
=6.0 mA
0.17
0.26
0.33
0.40
6.0
I
O
=7.8 mA
0.18
0.26
0.33
0.40
I
I
Input Leakage
Current
6.0
V
I
= V
CC
or GND
0.1
1
1
A
I
OZ
High Impedance
Output Leakage
Current
6.0
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
0.5
5
10
A
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
4
40
80
A
M74HC125
4/10
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 6ns)
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/4 (per buffer)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
TLH
t
THL
Output Transition
Time
2.0
50
20
60
75
90
ns
4.5
6
12
15
18
6.0
5
10
13
15
t
PLH
t
PHL
Propagation Delay
Time
2.0
50
36
75
95
110
ns
4.5
9
15
19
22
6.0
8
13
16
19
2.0
150
52
105
130
160
ns
4.5
13
21
26
32
6.0
11
18
22
27
t
PZL
t
PZH
High Impedance
Output Enable
Time
2.0
50
R
L
= 1 K
36
75
95
110
ns
4.5
9
15
19
22
6.0
8
13
16
19
2.0
150
R
L
= 1 K
52
105
130
160
ns
4.5
13
21
26
32
6.0
11
18
22
27
t
PLZ
t
PHZ
High Impedance
Output Disable
Time
2.0
50
R
L
= 1 K
48
80
100
120
ns
4.5
12
16
20
24
6.0
10
14
17
20
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
5.0
5
10
10
10
pF
C
PD
Power Dissipation
Capacitance (note
1)
5.0
35
pF
M74HC125
5/10
TEST CIRCUIT
C
L
= 50pF/150pF or equivalent (includes jig and probe capacitance)
R
1
= 1K
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
))
WAVEFORM 1 : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
TEST
SWITCH
t
PLH
, t
PHL
Open
t
PZL
, t
PLZ
V
CC
t
PZH
, t
PHZ
GND
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