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Электронный компонент: M74HC151RM13TR

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1/12
July 2001
s
HIGH SPEED:
t
PD
= 17ns (TYP.) at V
CC
= 6V
s
LOW POWER DISSIPATION:
I
CC
= 4
A(MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 151
DESCRIPTION
The M74HC151 is an high speed CMOS 8
CHANNEL MULTIPLEXER fabricated with silicon
gate C
2
MOS technology.
It provides, in one package, the ability to select
one bit of data from up to eight sources. The
M74HC151 can be used as a universal function
generator to generate any logic function of four
variables. Outputs Y and W are complementary;
the selection depends on the address inputs A, B,
and C. The strobe input must be taken low to
enable this device, when the strobe is high W
output is forced high and consequently Y output
goes low. All inputs are equipped with protection
circuits against static discharge and transient
excess voltage.
M74HC151
8 CHANNEL MULTIPLEXER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
TUBE
T & R
DIP
M74HC151B1R
SOP
M74HC151M1R
M74HC151RM13TR
TSSOP
M74HC151TTR
TSSOP
DIP
SOP
M74HC151
2/12
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X : Don't Care
PIN No
SYMBOL
NAME AND FUNCTION
4, 3, 2, 1, 15,
14, 13, 12
D
0
to D
7
Multiplexer Inputs
5
Y
Multiplexer Output
6
W
Complementary
Multiplexer Output
7
STROBE
Strobe Input
11, 10, 9
A, B, C
Select Inputs
8
GND
Ground (0V)
16
V
CC
Positive Supply Voltage
INPUTS OUTPUTS
SELECT
STROBE
Y
W
C
B
A
S
X
X
X
H
L
H
L
L
L
L
D
0
D
0
L
L
H
L
D
1
D
1
L
H
L
L
D
2
D
2
L
H
H
L
D
3
D
3
H
L
L
L
D
4
D
4
H
L
H
L
D
5
D
5
H
H
L
L
D
6
D
6
H
H
H
L
D
7
D
7
M74HC151
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LOGIC DIAGRAM
This logic diagram has not be used to estimate propagation delays
M74HC151
4/12
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
C; derate to 300mW by 10mW/
C from 65
C to 85
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
P
D
Power Dissipation
500(*)
mW
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 6
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
t
r
, t
f
Input Rise and Fall Time
V
CC
= 2.0V
0 to 1000
ns
V
CC
= 4.5V
0 to 500
ns
V
CC
= 6.0V
0 to 400
ns
M74HC151
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DC SPECIFICATIONS
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
V
OH
High Level Output
Voltage
2.0
I
O
=-20
A
1.9
2.0
1.9
1.9
V
4.5
I
O
=-20
A
4.4
4.5
4.4
4.4
6.0
I
O
=-20
A
5.9
6.0
5.9
5.9
4.5
I
O
=-4.0 mA
4.18
4.31
4.13
4.10
6.0
I
O
=-5.2 mA
5.68
5.8
5.63
5.60
V
OL
Low Level Output
Voltage
2.0
I
O
=20
A
0.0
0.1
0.1
0.1
V
4.5
I
O
=20
A
0.0
0.1
0.1
0.1
6.0
I
O
=20
A
0.0
0.1
0.1
0.1
4.5
I
O
=4.0 mA
0.17
0.26
0.33
0.40
6.0
I
O
=5.2 mA
0.18
0.26
0.33
0.40
I
I
Input Leakage
Current
6.0
V
I
= V
CC
or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
4
40
80
A