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Электронный компонент: M74HC294RM13TR

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1/11
August 2001
s
HIGH SPEED :
f
MAX
= 75 MHz (TYP.) at V
CC
= 6V
s
LOW POWER DISSIPATION:
I
CC
=4
A(MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 294
DESCRIPTION
The M74HC294 is an high speed CMOS
PROGRAMMABLE DIVIDER/TIMER fabricated
with silicon gate C
2
MOS technology.
This device is a programmable frequency divider
and has two clock inputs, either one may be used
for clock gating. (see the function table).
The M74HC294 can divide from 2
2
to 2
15
. This
device feature an active-low clear input to initialize
the state of all flip-flops. To facilitate incoming
inspection, test points (TP) are provided. All
inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
This device has Q output with "Totem Pole"
configuration and test point TP with "Open Drain"
output configuration.
M74HC294
PROGRAMMABLE DIVIDER/TIMER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
TUBE
T & R
DIP
M74HC294B1R
SOP
M74HC294M1R
M74HC294RM13TR
TSSOP
M74HC294TTR
TSSOP
DIP
SOP
M74HC294
2/11
INPUT AND OUTPUT EQUIVALENT CIRCUIT
(TOTEM POLE OUTPUT)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
(OPEN DRAIN OUTPUT)
PIN DESCRIPTION
TRUTH TABLE
PIN No
SYMBOL
NAME AND FUNCTION
4, 5
CLK1, CLK2
Input Clock
1, 2, 14, 15
A to E
Program Inputs
3
TP
Test Point Outputs
11
CLR
Clear (Active LOW)
7
Q
Output
8
GND
Ground (0V)
16
Vcc
Positive Supply Voltage
CLR
CLK1
CLK2
Q OUTPUT MODE
L
X
X
CLEARED TO L
H
L
UP COUNT
H
L
H
H
X
NO CHANGE
H
X
H
M74HC294
3/11
LOGIC DIAGRAM
This logic diagram has not be used to estimate propagation delays
M74HC294
4/11
FUNCTIONAL TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
C; derate to 300mW by 10mW/
C from 65
C to 85
C
PROGRAMMING INPUTS
FREQUENCY DIVISION
Q
TP
D
C
B
A
BINARY DECIMAL BINARY DECIMAL
L
L
L
L
Inhibit Inhibit Inhibit Inhibit
L
L
L
H
Inhibit Inhibit Inhibit Inhibit
L
L
H
L
2
2
4 2
9
512
L
L
H
H
2
3
8 2
9
512
L
H
L
L
2
4
16 2
9
512
L
H
L
H
2
5
32 2
9
512
L
H
H
L
2
6
64 2
9
512
L
H
H
H
2
7
128 Disabled Low
H
L
L
L
2
8
256 2
2
4
H
L
L
H
2
9
512 2
3
8
H
L
H
L
2
10
1.024 2
4
16
H
L
H
H
2
11
2.048 2
5
32
H
H
L
L
2
12
4.096 2
6
64
H
H
L
H
2
13
8.192 2
7
128
H
H
H
L
2
14
16.384 2
8
256
H
H
H
H
2
15
32.768 2
9
512
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
P
D
Power Dissipation
500(*)
mW
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
M74HC294
5/11
RECOMMENDED OPERATING CONDITIONS
DC SPECIFICATIONS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 6
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
t
r
, t
f
Input Rise and Fall Time
V
CC
= 2.0V
0 to 1000
ns
V
CC
= 4.5V
0 to 500
ns
V
CC
= 6.0V
0 to 400
ns
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
V
OH
High Level Output
Voltage (Q)
2.0
I
O
=-20
A
1.9
2.0
1.9
1.9
V
4.5
I
O
=-20
A
4.4
4.5
4.4
4.4
6.0
I
O
=-20
A
5.9
6.0
5.9
5.9
4.5
I
O
=-4.0 mA
4.18
4.31
4.13
4.10
6.0
I
O
=-5.2 mA
5.68
5.8
5.63
5.60
V
OL
Low Level Output
Voltage (Q)
2.0
I
O
=20
A
0.0
0.1
0.1
0.1
V
4.5
I
O
=20
A
0.0
0.1
0.1
0.1
6.0
I
O
=20
A
0.0
0.1
0.1
0.1
4.5
I
O
=4.0 mA
0.17
0.26
0.33
0.40
6.0
I
O
=5.2 mA
0.18
0.26
0.33
0.40
V
OL
Low Level Output
Voltage (TP)
2.0
I
O
=20
A
0.0
0.1
0.1
0.1
V
4.5
I
O
=20
A
0.0
0.1
0.1
0.1
6.0
I
O
=20
A
0.0
0.1
0.1
0.1
4.5
I
O
=1.0 mA
0.17
0.26
0.33
0.40
6.0
I
O
=1.3 mA
0.18
0.26
0.33
0.40
I
I
Input Leakage
Current
6.0
V
I
= V
CC
or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
4
40
80
A