M54HC32
M74HC32
December 1992
QUAD 2-INPUT OR GATE
B1R
(Plastic Package)
ORDER CODES :
M54HC32F1R
M74HC32M1R
M74HC32B1R
M74HC32C1R
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
PIN CONNECTIONS (top view)
NC =
No Internal
Connection
INPUT AND OUTPUT EQUIVALENT CIRCUIT
.
HIGH SPEED
t
PD
= 6 ns (TYP.) AT V
CC
= 5 V
.
LOW POWER DISSIPATION
I
CC
= 1
A (MAX.) AT T
A
= 25
C
.
HIGH NOISE IMMUNITY
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
.
OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.
SYMMETRICAL OUTPUT IMPEDANCE
IOH
= I
OL
= 4 mA (MIN.)
.
BALANCED PROPAGATION DELAYS
t
PLH
= t
PHL
.
WIDE OPERATING VOLTAGE RANGE
V
CC
(OPR) = 2 V TO 6 V
.
PIN AND FUNCTION COMPATIBLE WITH
54/74LS32
The M54/74HC32 is a high speed CMOS 2-INPUT
OR GATE fabricated in silicon gate C
2
MOS technol-
ogy. It has the same high speed performance of
LSTTL combined with true CMOS low power con-
sumption. It achieves the high speed operation simi-
lar to equivalent LSTTL while maintaining the
CMOS low power dissipation. The internal circuit is
composed of 2 stages including buffered output,
which gives high noise immunity and a stable out-
put. All inputs are equipped with protection circuits
against static discharge and transient excess volt-
age.
DESCRIPTION
1/9
TRUTH TABLE
A
B
Y
L
L
L
L
H
H
H
L
H
H
H
H
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
1, 4, 9, 12
1A to 4A
Data Inputs
2, 5, 10, 13
1B to 4B
Data Inputs
3, 6, 8, 11
1Y to 4Y
Data Outputs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
IEC LOGIC SYMBOL
SCHEMATIC CIRCUIT (Per Gate)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Source Sink Current Per Output Pin
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
P
D
Power Dissipation
500 (*)
mW
T
stg
Storage Temperature
-65 to +150
o
C
T
L
Lead Temperature (10 sec)
300
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
(*) 500 mW:
65
o
C derate to 300 mW by 10mW/
o
C: 65
o
C to 85
o
C
M54/M74HC32
2/9
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6 ns)
Symbol
Parameter
Test Conditions
Value
Unit
V
CC
(V)
T
A
= 25
o
C
54HC and 74HC
-40 to 85
o
C
74HC
-55 to 125
o
C
54HC
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
TLH
t
THL
Output Transition
Time
2.0
30
75
95
110
ns
4.5
8
15
19
22
6.0
7
13
16
19
t
PLH
t
PHL
Propagation
Delay Time
2.0
24
75
95
110
ns
4.5
8
15
19
22
6.0
7
13
16
19
C
IN
Input Capacitance
5
10
10
10
pF
C
PD
(*)
Power Dissipation
Capacitance
21
pF
(*) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the following equation. I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
/4 (per Gate)
SWITCHING CHARACTERISTICS TEST CIRCUIT
INPUT WAVEFORM IS THE SAVE AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST.
TEST CIRCUIT I
CC
(Opr.)
M54/M74HC32
4/9
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