1/11
July 2001
s
HIGH SPEED:
t
PD
= 7ns (TYP.) at V
CC
= 6V
s
LOW POWER DISSIPATION:
I
CC
= 1
A(MAX.) at T
A
=25C
s
LOW "ON" RESISTANCE:
R
ON
= 50
TYP. AT V
CC
= 9V, I
I/O
= 100
A
s
WIDE OPERATING VOLTAGE RANGE
V
CC
(OPR) = 2V TO 12V
s
SINE WAVE DISTORTION:
0.042% at V
CC
= 4V f = 1KHz
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 4066
DESCRIPTION
The M74HC4066 is an high speed CMOS QUAD
BILATERAL SWITCH fabricated with silicon gate
C
2
MOS technology.
The C input is provided to control the switch; the
switch is on when the C input is held high and off
when C is held low.
M74HC4066
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
TUBE
T & R
DIP
M74HC4066B1R
SOP
M74HC4066M1R
M74HC4066RM13TR
TSSOP
M74HC4066TTR
TSSOP
DIP
SOP
QUAD BILATERAL SWITCH
M74HC4066
2/11
LOGIC DIAGRAM
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
C; derate to 300mW by 10mW/
C from 65
C to 85
C
RECOMMENDED OPERATING CONDITIONS
PIN No
SYMBOL
NAME AND FUNCTION
1, 4, 8, 11
1 to 4 I/O
Independent Inputs/Out-
puts
2, 3, 9, 10
1 to 4 O/I
Independent Outputs/
Inputs
13, 5, 6, 12
1C to 4C
Enable Inputs (Active
High)
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
CONTROL
SWITCH FUNCTION
H
ON
L
OFF
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +13
V
V
IN
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
I/O
DC Input/Output Voltage
-0.5 to V
CC
+ 0.5
V
I
OK
Control Input DC Diode Current
20
mA
I
IOK
I/O DC Diode Current
20
mA
I
O
DC Output Source Sink Current Per Output Pin
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
P
D
Power Dissipation
500(*)
mW
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 12
V
V
IN
Input Voltage (Control)
0 to V
CC
V
V
I/O
I/O Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
t
r
, t
f
Input Rise and Fall Time
V
CC
= 2.0V
0 to 1000
ns
V
CC
= 4.5V
0 to 500
V
CC
= 6.0V
0 to 400
V
CC
= 10.0V
0 to 250
M74HC4066
3/11
DC SPECIFICATIONS
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IHC
High Level Control
Input Voltage
2.0
1.5
1.5
1.5
V
4.5
3.15
3.15
3.15
9.0
6.3
6.3
6.3
12.0
8.4
8.4
8.4
V
ILC
Low Level Control
Input Voltage
2.0
0.5
0.5
0.5
V
4.5
1.35
1.35
1.35
9.0
2.7
2.7
2.7
12.0
3.6
3.6
3.6
R
ON
ON Resistance
4.5
V
I
= V
IHC
V
I/O
= V
CC
to GND
I
I/O
1mA
96
170
200
250
9.0
55
85
100
150
12.0
45
80
90
120
4.5
V
I
= V
IHC
V
I/O
= V
CC
or GND
I
I/O
1mA
70
100
130
160
9.0
50
75
95
115
12.0
45
70
90
110
R
ON
Difference of ON
Resistance
between switches
4.5
V
I
= V
IHC
V
I/O
= V
CC
or GND
I
I/O
1mA
10
9.0
5
12.0
5
I
OFF
Input/Output
Leakage Current
(SWITCH OFF)
12.0
V
OS
= V
CC
or GND
V
IS
= V
CC
or GND
V
IN
= V
ILC
0.1
1
2
A
I
IZ
Switch Input
Leakage Current
(SWITCH ON,
OUTPUT OPEN)
12.0
V
OS
= V
CC
or GND
V
IN
= V
IHC
0.1
1
2
A
I
IN
Control Input
Current
6.0
V
I
= V
CC
or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
1
10
20
A
9.0
4
40
80
12.0
8
80
160
M74HC4066
4/11
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6ns)
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
I/O
Phase Difference
Between Input and
Output
2.0
10
50
65
75
ns
4.5
4
10
13
15
9.0
3
8
10
13
12.0
3
7
9
10
t
PZL
t
PZH
Output Enable Time
2.0
R
L
= 1K
18
100
125
150
ns
4.5
8
20
25
30
9.0
6
12
22
27
12.0
6
12
18
25
t
PLZ
t
PHZ
Output Disable
Time
2.0
R
L
= 1K
20
115
145
175
ns
4.5
10
23
29
35
9.0
8
20
25
30
12.0
8
18
22
27
Maximum Control
Input Frequency
2.0
R
L
= 1K
C
L
= 15 pF
V
OUT
= 1/2
V
CC
30
MHz
4.5
30
9.0
30
12.0
30
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
5
10
10
10
pF
C
I/O
Switch Terminal
Capacitance
6
pF
C
IOS
Feed Through
Capacitance
0.5
pF
C
PD
Power Dissipation
Capacitance
(note 1)
15
pF
M74HC4066
5/11
ANALOG SWITCH CHARACTERISTICS (GND = 0V;T
A
= 25C)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
V
IN
(V
p-p
)
Typ.
Sine Wave
Distortion (THD)
4.5
4
f
IN
= 1 KHz R
L
= 10 K
, C
L
= 50 pF
0.05
%
9.0
8
0.04
f
MAX
Frequency
Response
(Switch ON)
4.5
Adjust f
IN
voltage to obtain 0 dBm at V
OS
.
Increase f
IN
Frequency until dB meter reads -3dB
R
L
= 50
, C
L
= 10 pF
200
MHz
9.0
200
Feed through
Attenuation (Switch
OFF)
4.5
V
IN
is centered at V
CC
/2. Adjust input for 0 dBm
R
L
= 600
C
L
= 50 pF, f
IN
= 1MHz sine wave
-60
dB
9.0
-60
Crosstalk (Control
Input to Signal
Output)
4.5
R
L
= 600
, C
L
= 50 pF, f
IN
= 1MHz square wave (t
r
= t
f
=6ns)
60
mV
9.0
100
Crosstalk (Between
Any Switches)
4.5
Adjust V
IN
to Obtain 0 dBmat input
R
L
= 600
, C
L
= 50 pF, f
IN
= 1MHz sine wave
-60
dB
9.0
-60
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