1/10
July 2001
s
HIGH SPEED:
t
PD
= 9ns (TYP.) at V
CC
= 6V
s
LOW POWER DISSIPATION:
I
CC
= 4
A(MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 6mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 541
DESCRIPTION
The 74HC541 is an advanced high-speed CMOS
OCTAL BUS BUFFER (3-STATE) fabricated with
silicon gate C
2
MOS technology. The M74HC541
is a non inverting buffer.
The 3-STATE control gate operates as a two input
AND such that if either G1 and G2 are high, all
eight output are in the high impedance state. In
order to enhance PC board layout the M74HC541
offer a pinout having inputs and outputs on
opposite sides of the package.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HC541
OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (NON INVERTED)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
TUBE
T & R
DIP
M74HC541B1R
SOP
M74HC541M1R
M74HC541RM13TR
TSSOP
M74HC541TTR
TSSOP
DIP
SOP
M74HC541
2/10
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X : Don't Care
Z : High Impedance
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
C; derate to 300mW by 10mW/
C from 65
C to 85
C
PIN No
SYMBOL
NAME AND FUNCTION
1, 19
G1, G2
Output Enable Inputs
2, 3, 4, 5, 6,
7, 8, 9
A1 to A8
Data Inputs
18, 17, 16,
15, 14, 13,
12, 11
Y1 to Y8
Bus Outputs
10
GND
Ground (0V)
20
V
CC
Positive Supply Voltage
INPUT OUTPUT
G1
G2
An
Yn
H
X
X
Z
X
H
X
Z
L
L
H
H
L
L
L
L
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
35
mA
I
CC
or I
GND
DC V
CC
or Ground Current
70
mA
P
D
Power Dissipation
500(*)
mW
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
M74HC541
3/10
RECOMMENDED OPERATING CONDITIONS
DC SPECIFICATIONS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 6
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
t
r
, t
f
Input Rise and Fall Time
V
CC
= 2.0V
0 to 1000
ns
V
CC
= 4.5V
0 to 500
ns
V
CC
= 6.0V
0 to 400
ns
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
V
OH
High Level Output
Voltage
2.0
I
O
=-20
A
1.9
2.0
1.9
1.9
V
4.5
I
O
=-20
A
4.4
4.5
4.4
4.4
6.0
I
O
=-20
A
5.9
6.0
5.9
5.9
4.5
I
O
=-6.0 mA
4.18
4.31
4.13
4.10
6.0
I
O
=-7.8 mA
5.68
5.8
5.63
5.60
V
OL
Low Level Output
Voltage
2.0
I
O
=20
A
0.0
0.1
0.1
0.1
V
4.5
I
O
=20
A
0.0
0.1
0.1
0.1
6.0
I
O
=20
A
0.0
0.1
0.1
0.1
4.5
I
O
=6.0 mA
0.17
0.26
0.33
0.40
6.0
I
O
=7.8 mA
0.18
0.26
0.33
0.40
I
I
Input Leakage
Current
6.0
V
I
= V
CC
or GND
0.1
1
1
A
I
OZ
High Impedance
Output Leakage
Current
6.0
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
0.5
5
10
A
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
4
40
80
A
M74HC541
4/10
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6ns)
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/8 (per circuit)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
TLH
t
THL
Output Transition
Time
2.0
50
25
60
75
90
ns
4.5
7
12
19
18
6.0
6
10
13
15
t
PLH
t
PHL
Propagation Delay
Time
2.0
50
40
85
105
130
ns
4.5
10
17
21
26
6.0
9
14
18
22
2.0
150
56
115
145
175
ns
4.5
14
23
29
35
6.0
12
20
25
30
t
PZL
t
PZH
High Impedance
Output Enable
Time
2.0
50
R
L
= 1 K
47
110
140
165
ns
4.5
13
22
28
33
6.0
11
19
24
28
2.0
150
R
L
= 1 K
61
135
170
205
ns
4.5
17
27
34
41
6.0
14
23
29
35
t
PLZ
t
PHZ
High Impedance
Output Disable
Time
2.0
50
R
L
= 1 K
52
110
140
165
ns
4.5
15
22
28
33
6.0
13
19
24
28
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
5.0
5
10
10
10
pF
C
PD
Power Dissipation
Capacitance (note
1)
5.0
31
pF
M74HC541
5/10
TEST CIRCUIT
C
L
= 50pF/150pF or equivalent (includes jig and probe capacitance)
R
1
= 1K
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
)
WAVEFORM 1: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
TEST
SWITCH
t
PLH
, t
PHL
Open
t
PZL
, t
PLZ
V
CC
t
PZH
, t
PHZ
GND
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