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Электронный компонент: M74HC670B1R

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M54HC670
M74HC670
October 1992
4 WORD X 4 BIT REGISTER FILE (3 STATE)
B1R
(Plastic Package)
ORDER CODES :
M54HC670F1R
M74HC670M1R
M74HC670B1R
M74HC670C1R
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
PIN CONNECTIONS (top view)
NC =
No Internal
Connection
DESCRIPTION
.
HIGH SPEED
t
PD
= 23 ns (TYP.) AT V
CC
= 5 V
.
LOW POWER DISSIPATION
I
CC
= 4
A (MAX.) AT
T
A
= 25
C
.
HIGH NOISE IMMUNITY
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
.
OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.
SYMMETRICAL OUTPUT IMPEDANCE
|I
OH
| = I
OL
= 4 mA (MIN.)
.
BALANCED PROPAGATION DELAYS
t
PLH
= t
PHL
.
WIDE OPERATING VOLTAGE RANGE
V
CC
(OPR) = 2 V TO 6 V
.
PIN AND FUNCTION COMPATIBLE
WITH 54/74LS670
The M54/74HC670 is a high speed CMOS 4 WORD
X 4 BIT REGISTER FILE (3-STATE) fabricated in
silicon gate C
2
MOS technology. It has the same
high speed performance of LSTTL combined with
true
CMOS
low
power
consumption.
The
M54HC/74HC670 is a 4 x 4 Register File organized
as four words by four bits. Separate read and write
inputs, both address and enable, allow simulta-
neous read and write operation. The 3-state outputs
make it possible to connect up to 128 outputs to in-
crease the word capacity up to 512 words. Any num-
ber of these devices can be operated in parallel to
generate an n-bit length. All inputs are equipped with
protection circuits against static discharge and tran-
sient excess voltage.
1/12
LOGIC DIAGRAM
WRITE FUNCTION TABLE
WRITE INPUTS
WORDS
WB
WA
WE
0
1
2
3
L
L
L
Q = D
Q0
Q0
Q0
L
H
L
Q0
Q = D
Q0
Q0
H
L
L
Q0
Q0
Q = D
Q0
H
H
L
Q0
Q0
Q0
Q = D
X
X
H
Q0
Q0
Q0
Q0
READ FUNCTION TABLE
READ INPUTS
OUTPUTS
RB
RA
RE
Q0
Q1
Q2
Q3
L
L
L
W0B1 W0B2 W0B3 W0B4
L
H
L
W1B1 W1B2 W1B3 W1B4
H
L
L
W2B1 W2B2 W2B3 W2B4
H
H
L
W3B1 W3B2 W3B3 W3B4
X
X
H
Z
Z
Z
Z
Notes: 1 *: DON'T CARE Z: HIGH IMPEDANCE
2 (Q = D) = THE FOUR SELECT INTERNAL FLIP FLOP OUTPUTS WILL ASSUME THE STATES APPLIED TO THE FOUR
EXTERNAL DATA INPUTS.
3 Q0 = THE LEVEL OF Q BEFORE THE INDICATED INPUT CONDITIONS WERE ESTABLISHED.
4 W0B1 = THE FIRST BIT OF WORD 0, ETC.
M54/M74HC670
2/12
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
5, 4
RA, RB
Read Address Inputs
10, 9, 7, 6
Q1 to Q4
Data Outputs
11
RE
3 State Output Read
Enable Input (Active LOW)
12
WE
Write Enable Input (Active
LOW)
14, 13
WA, WB
Write Address Inputs
15, 1, 2, 3
D1 to D4
Data Inputs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
IEC LOGIC SYMBOL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Source Sink Current Per Output Pin
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
P
D
Power Dissipation
500 (*)
mW
T
stg
Storage Temperature
-65 to +150
o
C
T
L
Lead Temperature (10 sec)
300
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
(*) 500 mW:
65
o
C derate to 300 mW by 10mW/
o
C: 65
o
C to 85
o
C
M54/M74HC670
3/12
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 6
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature: M54HC Series
M74HC Series
-55 to +125
-40 to +85
o
C
o
C
t
r
, t
f
Input Rise and Fall Time
V
CC
= 2 V
0 to 1000
ns
V
CC
= 4.5 V
0 to 500
V
CC
= 6 V
0 to 400
DC SPECIFICATIONS
Symbol
Parameter
Test Conditions
Value
Unit
V
CC
(V)
T
A
= 25
o
C
54HC and 74HC
-40 to 85
o
C
74HC
-55 to 125
o
C
54HC
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
V
OH
High Level
Output Voltage
2.0
V
I
=
V
IH
or
V
IL
I
O
=-20
A
1.9
2.0
1.9
1.9
V
4.5
4.4
4.5
4.4
4.4
6.0
5.9
6.0
5.9
5.9
4.5
I
O
=-4.0 mA
4.18
4.31
4.13
4.10
6.0
I
O
=-5.2 mA
5.68
5.8
5.63
5.60
V
OL
Low Level Output
Voltage
2.0
V
I
=
V
IH
or
V
IL
I
O
= 20
A
0.0
0.1
0.1
0.1
V
4.5
0.0
0.1
0.1
0.1
6.0
0.0
0.1
0.1
0.1
4.5
I
O
= 4.0 mA
0.17
0.26
0.33
0.40
6.0
I
O
= 5.2 mA
0.18
0.26
0.33
0.40
I
I
Input Leakage
Current
6.0
V
I
= V
CC
or GND
0.1
1
1
A
I
OZ
3 State Output
Off State Current
6.0
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
0.5
5
5
A
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
4
40
80
A
M54/M74HC670
4/12
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6 ns)
Symbol
Parameter
Test Conditions
Value
Unit
V
CC
(V)
T
A
= 25
o
C
54HC and 74HC
-40 to 85
o
C
74HC
-55 to 125
o
C
54HC
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
TLH
t
THL
Output Transition
Time
2.0
30
75
95
110
ns
4.5
8
15
19
22
6.0
7
13
16
19
t
PLH
t
PHL
Propagation
Delay Time
(RA, RB - Qn)
2.0
96
185
230
280
ns
4.5
24
37
46
56
6.0
20
31
39
48
t
PLH
t
PHL
Propagation
Delay Time
(WE - Qn)
2.0
108
220
275
330
ns
4.5
27
44
55
66
6.0
23
37
47
56
t
PLH
t
PHL
Propagation
Delay Time
(Dn - Qn)
2.0
104
185
230
280
ns
4.5
26
37
46
56
6.0
22
31
39
48
t
PZL
t
PZH
Output Disable
Time
2.0
R
L
= 1 K
42
110
140
165
ns
4.5
13
22
28
33
6.0
11
19
24
28
t
PLZ
t
PHZ
Output Disable
Time
2.0
R
L
= 1 K
25
95
120
145
ns
4.5
13
19
24
29
6.0
11
16
20
25
t
W(L)
Minimum Pulse
Width
(WE)
2.0
16
75
95
110
ns
4.5
4
15
19
22
6.0
3
13
16
19
t
s
Minimum Set-up
Time (Dn - WE)
(WA, WB - WE)
2.0
12
50
65
75
ns
4.5
3
10
13
15
6.0
3
9
11
13
t
h
Minimum Hold
Time
(Dn - WE)
2.0
0
0
0
ns
4.5
0
0
0
6.0
0
0
0
t
h
Minimum Hold
Time
(WA, WB - WE)
2.0
5
5
5
ns
4.5
5
5
5
6.0
5
5
5
t
latch
Minimum Latch
Time
(WE - RA, RB)
2.0
5
5
5
ns
4.5
5
5
5
6.0
5
5
5
C
IN
Input Capacitance
5
10
10
10
pF
C
PD
(*)
Power Dissipation
Capacitance
96
pF
(*) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the following equation. I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
M54/M74HC670
5/12