1/9
July 2001
s
HIGH SPEED:
t
PD
= 9ns (TYP.) at V
CC
= 6V
s
LOW POWER DISSIPATION:
I
CC
= 1
A(MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 7266
DESCRIPTION
The M74HC7266 is an high speed CMOS QUAD
EXCLUSIVE OR GATE fabricated with silicon
gate C
2
MOS technology
The M74HC7266 has an output buffer which is
CMOS structure.
Input and Output ensure high noise immunity and
stable outputs.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HC7266
QUAD EXCLUSIVE NOR GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
TUBE
T & R
DIP
M74HC7266B1R
SOP
M74HC7266M1R
M74HC7266RM13TR
TSSOP
M74HC7266TTR
TSSOP
DIP
SOP
M74HC7266
2/9
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
C; derate to 300mW by 10mW/
C from 65
C to 85
C
RECOMMENDED OPERATING CONDITIONS
PIN No
SYMBOL
NAME AND FUNCTION
1, 5, 8, 12
1A to 4A
Data Inputs
2, 6, 9, 13
1B to 4B
Data Inputs
3, 4, 10, 11
1Y to 4Y
Data Outputs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
A
B
Y
L
L
H
L
H
L
H
L
L
H
H
H
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
P
D
Power Dissipation
500(*)
mW
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 6
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
t
r
, t
f
Input Rise and Fall Time
V
CC
= 2.0V
0 to 1000
ns
V
CC
= 4.5V
0 to 500
ns
V
CC
= 6.0V
0 to 400
ns
M74HC7266
3/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6ns)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
V
OH
High Level Output
Voltage
2.0
I
O
=-20
A
1.9
2.0
1.9
1.9
V
4.5
I
O
=-20
A
4.4
4.5
4.4
4.4
6.0
I
O
=-20
A
5.9
6.0
5.9
5.9
4.5
I
O
=-4.0 mA
4.18
4.31
4.13
4.10
6.0
I
O
=-5.2 mA
5.68
5.8
5.63
5.60
V
OL
Low Level Output
Voltage
2.0
I
O
=20
A
0.0
0.1
0.1
0.1
V
4.5
I
O
=20
A
0.0
0.1
0.1
0.1
6.0
I
O
=20
A
0.0
0.1
0.1
0.1
4.5
I
O
=4.0 mA
0.17
0.26
0.33
0.40
6.0
I
O
=5.2 mA
0.18
0.26
0.33
0.40
I
I
Input Leakage
Current
6.0
V
I
= V
CC
or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
1
10
20
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
TLH
t
THL
Output Transition
Time
2.0
30
75
95
110
ns
4.5
8
15
19
22
6.0
7
13
16
19
t
PLH
t
PHL
Propagation Delay
Time
2.0
36
90
115
135
ns
4.5
11
18
23
27
6.0
9
15
20
23
M74HC7266
4/9
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/4 (per gate)
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50
)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
5.0
5
10
10
10
pF
C
PD
Power Dissipation
Capacitance (note
1)
5.0
20
pF
M74HC7266
5/9
WAVEFORM 1: PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)
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