M54HCT10
M74HCT10
February 1993
TRIPLE 3-INPUT NAND GATE
B1R
(Plastic Package)
ORDER CODES :
M54HCT10F1R
M74HCT10M1R
M74HCT10B1R
M74HCT10C1R
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
PIN CONNECTIONS (top view)
NC =
No Internal
Connection
INPUT AND OUTPUT EQUIVALENT CIRCUIT
.
HIGH SPEED
t
PD
= 11 ns (TYP.) AT V
CC
= 5 V
.
LOW POWER DISSIPATION
I
CC
= 1
A (MAX.) AT T
A
= 25
C
.
COMPATIBLE WITH TTL OUTPUTS
V
IH
= 2V (MIN.) V
IL
= 0.8V (MAX)
.
OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.
SYMMETRICAL OUTPUT IMPEDANCE
IOH
= I
OL
= 4 mA (MIN.)
.
BALANCED PROPAGATION DELAYS
t
PLH
= t
PHL
.
PIN AND FUNCTION COMPATIBLE WITH
54/74LS10
The M54/74HCT10 is a high speed CMOS TRIPLE
3-INPUT NAND GATE fabricated with silicon gate
C
2
MOS technology. It has the same high speed per-
formance of LSTTL combined with true CMOS low
power consumption. The internal circuit is com-
posed of 3 stages including buffer output, which en-
ables high noise immunity and stable output. All
inputs are equipped with protection circuits against
static discharge and transient excess voltage.
This integrated circuit has input and output charac-
teristics that are fully compatible with 54/74 LSTTL
logic families. M54/74HCT devices are designed to
directly interface HSC
2
MOS systems with TTL and
NMOS components. They are also plug in replace-
ments for LSTTL devices giving a reduction of
power consumption.
DESCRIPTION
1/9
TRUTH TABLE
A
B
C
Y
L
X
X
H
X
L
X
H
X
X
L
H
H
H
H
L
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
1, 3, 9
1A to 3A
Data Inputs
2, 4, 10
1B to 3B
Data Inputs
13, 5, 11
1C to 3C
Data Inputs
12, 6, 8
1Y to 3Y
Data Outputs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
IEC LOGIC SYMBOL
SCHEMATIC CIRCUIT (Per Gate)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Source Sink Current Per Output Pin
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
P
D
Power Dissipation
500 (*)
mW
T
stg
Storage Temperature
-65 to +150
o
C
T
L
Lead Temperature (10 sec)
300
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
(*) 500 mW:
65
o
C derate to 300 mW by 10mW/
o
C: 65
o
C to 85
o
C
M54/M74HCT10
2/9
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
4.5 to 5.5
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature: M54HC Series
M74HC Series
-55 to +125
-40 to +85
o
C
o
C
t
r
, t
f
Input Rise and Fall Time (V
CC
= 4.5 to 5.5V)
0 to 500
ns
DC SPECIFICATIONS
Symbol
Parameter
Test Conditions
Value
Unit
V
CC
(V)
T
A
= 25
o
C
54HC and 74HC
-40 to 85
o
C
74HC
-55 to 125
o
C
54HC
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
4.5
to
5.5
2.0
2.0
2.0
V
V
IL
Low Level Input
Voltage
4.5
to
5.5
0.8
0.8
0.8
V
V
OH
High Level
Output Voltage
4.5
V
I
=
V
IH
or
V
IL
I
O
=-20
A
4.4
4.5
4.4
4.4
V
I
O
=-4.0 mA
4.18
4.31
4.13
4.10
V
OL
Low Level Output
Voltage
4.5
V
I
=
V
IH
or
V
IL
I
O
= 20
A
0.0
0.1
0.1
0.1
V
I
O
= 4.0 mA
0.17
0.26
0.33
0.4
I
I
Input Leakage
Current
5.5
V
I
= V
CC
or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
1
10
20
A
I
CC
Additional worst
case supply
current
5.5
Per Input pin
V
I
= 0.5V or
V
I
= 2.4V
Other Inputs at
V
CC
or GND
I
O
= 0
2.0
2.9
3.0
mA
M54/M74HCT10
3/9
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6 ns)
Symbol
Parameter
Test Conditions
Value
Unit
V
CC
(V)
T
A
= 25
o
C
54HC and 74HC
-40 to 85
o
C
74HC
-55 to 125
o
C
54HC
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
TLH
t
THL
Output Transition
Time
4.5
8
15
19
22
t
PLH
t
PHL
Propagation
Delay Time
4.5
14
22
28
33
C
IN
Input Capacitance
5
10
10
10
pF
C
PD
(*)
Power Dissipation
Capacitance
46
pF
(*) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the following equation. I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
/3 (per Gate)
SWITCHING CHARACTERISTICS TEST CIRCUIT
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST.
TEST CIRCUIT I
CC
(Opr.)
M54/M74HCT10
4/9
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