1/8
July 2004
s
HIGH SPEED:
t
PD
= 5ns (TYP.) at V
CC
= 6V
s
LOW POWER DISSIPATION:
I
CC
= 1
A(MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 10% V
CC
(MIN.)
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
s
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 04
s
SPACE GRADE-1: ESA SCC QUALIFIED
s
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
s
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
s
DEVICE FULLY COMPLIANT WITH
SCC-9401-055
DESCRIPTION
The M54HCU04 is an high speed CMOS HEX
INVERTER (SINGLE STATE) fabricated with
silicon gate C
2
MOS technology.
As internal circuit is composed of a single stage
inverter, it can be used in crystal oscillator.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M54HCU04
RAD HARD HEX INVERTER (SINGLE STATE)
Figure 1: Pin Connection
Table 1: Order Codes
PACKAGE
FM
EM
DILC
M54HCU04D
M54HCU04D1
FPC
M54HCU04K
M54HCU04K1
Rev. 1
DILC-14
FPC-14
M54HCU04
2/8
Figure 2: IEC Logic Symbols
Figure 3: Input And Output Equivalent Circuit
Table 2: Pin Description
Table 3: Truth Table
Table 4: Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
PIN N
SYMBOL
NAME AND FUNCTION
1, 3, 5, 9, 11,
13
1A to 6A
Data Inputs
2, 4, 6, 8, 10,
12
1Y to 6Y
Data Outputs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
A
Y
L
H
H
L
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
P
D
Power Dissipation
300
mW
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
265
C
M54HCU04
3/8
Table 5: Recommended Operating Conditions
Table 6: DC Specifications
Table 7: AC Electrical Characteristics (C
L
= 50 pF, Input t
r
= t
f
= 6ns)
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 6
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
t
r
, t
f
Input Rise and Fall Time
V
CC
= 2.0V
0 to 1000
ns
V
CC
= 4.5V
0 to 500
ns
V
CC
= 6.0V
0 to 400
ns
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.7
1.7
1.7
V
4.5
3.6
3.6
3.6
6.0
4.8
4.8
4.8
V
IL
Low Level Input
Voltage
2.0
0.3
0.3
0.3
V
4.5
0.9
0.9
0.9
6.0
1.2
1.2
1.2
V
OH
High Level Output
Voltage
2.0
I
O
=-20
A
1.8
2.0
1.8
1.8
V
4.5
I
O
=-20
A
4.0
4.5
4.0
4.0
6.0
I
O
=-20
A
5.5
5.9
5.5
5.5
4.5
I
O
=-4.0 mA
4.18
4.31
4.13
4.10
6.0
I
O
=-5.2 mA
5.68
5.8
5.63
5.60
V
OL
Low Level Output
Voltage
2.0
I
O
=20
A
0.0
0.2
0.2
0.2
V
4.5
I
O
=20
A
0.0
0.5
0.5
0.5
6.0
I
O
=20
A
0.1
0.5
0.5
0.5
4.5
I
O
=4.0 mA
0.17
0.26
0.33
0.40
6.0
I
O
=5.2 mA
0.18
0.26
0.33
0.40
I
I
Input Leakage
Current
6.0
V
I
= V
CC
or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
1
10
20
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
TLH
t
THL
Output Transition
Time
2.0
30
75
95
110
ns
4.5
8
15
19
22
6.0
7
13
16
19
t
PLH
t
PHL
Propagation Delay
Time
2.0
18
60
75
90
ns
4.5
6
12
15
18
6.0
5
10
13
15
M54HCU04
4/8
Table 8: Capacitive Characteristics
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
Figure 4: Test Circuit
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50
)
Figure 5: Waveform - Propagation Delay Time (f=1MHz; 50% duty cycle)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
5.0
5
10
10
10
pF
C
PD
Power Dissipation
Capacitance (note
1)
5.0
13
pF
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