MJ4032
MJ4035
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
s
MONOLITHIC DARLINGTON
CONFIGURATION
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The MJ4035 is silicon epitaxial-base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-3 metal case.
It is inteded for use in general purpose and
amplifier applications.
The complementary PNP type is the MJ4032.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
PNP
MJ4032
NPN
MJ4035
V
CBO
Collector-Base Voltage (I
E
= 0)
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
16
A
I
B
Base Current
0.5
A
P
tot
Total Dissipation at T
c
25
o
C
150
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
For PNP types voltage and current values are negative.
R
1
Typ. = 6 K
R
2
Typ. = 55
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.17
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 1K
)
V
CE
= 100 V
V
CE
= 100 V T
c
= 150
o
C
1
5
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 50 V
3
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
5
mA
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
I
C
= 100 mA
100
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 A I
B
= 40 mA
I
C
= 16 A I
B
= 80 mA
2.5
4
V
V
V
BE
Base-Emitter Voltage
I
C
= 10 A V
CE
= 3 V
3
V
h
FE
DC Current Gain
I
C
= 10 A V
CE
= 3 V
1000
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
For PNP type voltage and current values are negative.
MJ4032 / MJ4035
2/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
MJ4032 / MJ4035
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