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August 2002
MJD122-1 / MJD122T4
MJD127-1 / MJD127T4
COMPLEMENTARY POWER
DARLINGTON TRANSISTORS
s
STMicroelectronics PREFERRED SALESTYPES
s
LOW BASE-DRIVE REQUIREMENTS
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
s
THROUGH HOLE TO-251 (IPAK)
POWER PACKAGE IN TUBE (SUFFIX "-1")
s
SURFACE MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s
ELECTRICALLY SIMILAR TO TIP122 AND
TIP127
APPLICATIONS:
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD122 and MJD127 form complementary
NPN - PNP pair. They are manufactured using
Epi taxial Bas e technology for cost-eff ective
performance.
ABSOLUTE MAXIMUM RATINGS
For PNP types voltage and current values are negative.
Ordering
Code
Marking
Package
Shipment
MJD122T4
MJD122-1
MJD127T4
MJD127-1
MJD122
MJD122
MJD127
MJD127
TO-252 (DPAK)
TO-251 (IPAK)
TO-252 (DPAK)
TO-251 (IPAK)
Tape & Reel
Tube
Tape & Reel
Tube
Symbol
Parameter
Value
Unit
NPN
MJD122
PNP
MJD127
V
CBO
Collector-Base Voltage (I
E
= 0)
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
5
A
I
CM
Collector Peak Current (t
p
< 5 ms)
8
A
I
B
Base Current
0.1
A
P
tot
Total Dissipation at T
c
= 25
C
20
W
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
3
2
1
1
3
TO-252
DPAK
(Suffix "T4")
TO-251
IPAK
(Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 K
R
2
Typ. = 150
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
j
= 25
C unless otherwise specified)
* Pulsed: Pulse duration = 300
s, duty cycle
2 %.
For PNP types voltage and current values are negative.
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
6.25
100
C/W
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 100 V
10
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 50 V
10
A
I
CEX
Collector Cut-off
Current (V
BE
= -1.5 V)
V
CE
= 100 V
V
CE
= 100 V
T
j
= 125
C
10
500
A
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(sus)
*
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 30 mA
100
V
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 4 A
I
C
= 8 A
I
B
= 16 mA
I
B
= 80 mA
2
4
V
V
V
BE(sat)
*
Base-Emitter
Saturation Voltage
I
C
= 8 A
I
B
= 80 mA
4.5
V
V
BE(on)
*
Base-Emitter On
Voltage
I
C
= 4 A
V
CE
= 4 V
2.8
V
h
FE
*
DC Current Gain
I
C
= 4 A
I
C
= 8 A
V
CE
= 4 V
V
CE
= 4 V
1000
100
12000
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Base-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Safe Operating Area
Derating Curve
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
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Switching Times Resistive Load (NPN type)
Switching Times Resistive Load (PNP type)
DC Current Gain (PNP type)
Base-Emitter On Voltage (NPN type)
DC Current Gain (NPN type)
Base-Emitter On Voltage (PNP type)
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Freewheel Diode Forward Voltage (NPN type)
Freewheel Diode Forward Voltage (PNP type)
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