MJD31B/31C
MJD32B/32C
COMPLEMENTARY SILICON POWER TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s
ELECTRICALLY SIMILAR TO TIP31B/C AND
TIP32B/C
APPLICATIONS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER TRANSISTORS
DESCRIPTION
The MJD31B and MJD31C and the MJD32B and
MJD32C form complementary NPN-PNP pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
INTERNAL SCHEMATIC DIAGRAM
May 1999
1
3
DPAK
TO-252
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
MJD31B
MJD31C
PNP
MJD32B
MJD32C
V
CBO
Collector-Base Voltage (I
E
= 0)
80
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
3
A
I
CM
Collector Peak Current
5
A
I
B
Base Current
1
A
P
tot
Total Dissipation at T
c
= 25
o
C
15
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types the values are intented negative.
1/5
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
8.33
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= Max Rating
20
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 60 V
50
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
0.1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 30 mA
for MJD31B/32B
for MJD31C/32C
80
100
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 3 A I
B
= 375 mA
1.2
V
V
BE(on)
Base-Emitter Voltage
I
C
= 3 A V
CE
= 4 V
1.8
V
h
FE
DC Current Gain
I
C
= 1 A V
CE
= 4 V
I
C
= 3 A V
CE
= 4 V
25
10
50
h
fe
Dynamic Current Gain
I
C
= 0.5 A V
CE
= 10 V f = 1 KHz
I
C
= 0.5 A V
CE
= 10 V f = 1 MHz
20
3
Pulsed: Pulse duration = 300
s, duty cycle
2 %
For PNP type voltage and current values are negative.
Safe Operating Area
Derating Curves
MJD31B/31C - MJD32B/32C
2/5
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (PNP type)
Collector-Base Capacitance (PNP type)
MJD31B/31C - MJD32B/32C
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
MJD31B/31C - MJD32B/32C
4/5
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MJD31B/31C - MJD32B/32C
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