MJE210
SILICON PNP TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
PNP TRANSISTOR
DESCRIPTION
The MJE210 is a silicon epitaxial-base PNP
transistor in Jedec SOT-32 plastic package,
designed for low voltage, low power, high gain
aydio amplifier applications.
INTERNAL SCHEMATIC DIAGRAM
September 1997
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (IE = 0)
-40
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-25
V
V
EBO
Base-Emitter Voltage (IC = 0)
-8
V
I
C
Collector Current
-5
A
I
CM
Collector Peak Current
-10
A
I
B
Base Current
-1
A
P
tot
Total Power Dissipation at T
case
25
o
C
at T
a mb
25
o
C
15
1.5
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max Operating Junction Temperature
150
o
C
1/4
THERMAL DATA
R
thj-amb
R
thj-case
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-case Max
83.4
8.34
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -40 V
V
CB
= -40 V T
CASE =
125
o
C
-100
-100
nA
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -8 V
-100
nA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= -10 mA
-25
V
V
CE(sat)
Collector-Emitter
Sustaining Voltage
I
C
= -0.5 A I
B
= -50 mA
I
C
= -2 A I
B
= -0.2 A
I
C
= -5 A I
B
= -1 A
-0.3
-0.75
-1.8
V
V
V
V
BE(sat)
Base-Emitter on
Voltage
I
C
= -5 A I
B
= -1 A
-2.5
V
V
BE
Base-Emitter on
Voltage
I
C
=- 2 A V
CE
= -1 V
-1.6
V
h
FE
DC Current Gain
I
C
= -0.5 A V
CE
= -1 V
I
C
= -2 A V
CE
= -1 V
I
C
= -5 A V
CE
= -2 V
70
45
10
180
f
T
Transistor Frequency
I
C
= 0.1 A V
CE
= 10 V
f = 10 MHz
65
MHz
C
CBO
Collector-base
Capacitance
V
CB
= -10 V I
E
= 0 f = 0.1 MHz
120
pF
Pulsed: Pulse duration = 300
s, duty cycle
1.5%
MJE210
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
MJE210
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
MJE210
4/4
PDF 
ZIP