MJE802
MJE803
SILICON NPN POWER DARLINGTON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The MJE802 and MJE803 are silicon
epitaxial-base NPN transistors in monolithic
Darlington configuration and are mounted in
Jedec SOT-32 plastic package.They are intended
for use in medium power linear and switching
applications.
INTERNAL SCHEMATIC DIAGRAM
January 1997
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (IE = 0)
80
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
V
V
EBO
Base-Emitter Voltage (IC = 0)
5
V
I
C
Collector Current
4
A
I
B
Base Current
0.1
A
P
tot
Total Power Dissipation at T
case
25
o
C
40
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
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THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient Max
3.13
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= rated V
CBO
V
CB
= rated V
CBO
T
case =
100
o
C
100
500
A
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= rated V
CEO
100
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 50 mA
80
V
V
CE(sat)
Collector-Emitter
Sustaining Voltage
I
C
= 4 A I
B
= 40 mA
I
C
= 1.5 A I
B
= 30 mA
3
2.5
V
V
V
BE
Base-Emitter Voltage
I
C
= 4 A V
CE
= 3 V
I
C
= 1.5 A V
CE
= 3 V
3
2.5
V
V
h
FE
DC Current Gain
I
C
= 4 A V
CE
= 3 V
I
C
= 1.5 A V
CE
= 3 V
100
750
h
fe
Small Signal Current
Gain
I
C
= 1.5 A V
CE
= 3 V
f = 1 MHz
1
* Pulsed: Pulse duration = 300
s, duty cycle
1.5%
MJE802-MJ803
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.04
0.106
c1
1.2
0.047
D
15.7
0.618
e
2.2
0.087
e3
4.4
0.173
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
SOT-32 MECHANICAL DATA
0016114
MJE802-MJ803
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. .
MJE802-MJ803
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