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Электронный компонент: MSC81325M

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PRELIMINARY DATA
October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER BALLASTED
.
RUGGEDIZED VSWR
:1
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
325 W MIN. WITH 6.7 dB GAIN
DESCRIPTION
The MSC81325M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding an infinite
load VSWR at any phase angle under full rated
conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high relia-
bility and product consistency.
The MSC81325M is housed in the industry-stand-
ard AMPACTM metal/ceramic hermetic package
with internal input/output matching structures.
PIN CONNECTION
BRANDING
81325M
ORDER CODE
MSC81325M
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
100C)
880
W
I
C
Device Current*
24
A
V
CC
Collector-Supply Voltage*
55
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.17
C/W
*Applies only to rated RF amplifier operation
MSC81325M
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
1025 -- 1150 MHz P
IN
=
70 W
V
CC
=
50 V
325
360
--
W
c
f
=
1025 -- 1150 MHz P
IN
=
70 W
V
CC
=
50 V
40
41
--
%
G
P
f
=
1025 -- 1150 MHz P
IN
=
70 W
V
CC
=
50 V
6.7
7.1
--
dB
Note:
Pulse Width
=
10
Sec
Duty Cycle
=
1%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
10mA
I
E
=
0mA
65
--
--
V
BV
EBO
I
E
=
1mA
I
C
=
0mA
3.5
--
--
V
BV
CER
IC
=
25mA
R
BE
=
10
65
--
--
V
I
CES
V
BE
=
0V
V
CE
=
50V
--
--
25
mA
h
FE
V
CE
=
5V
I
C
=
1A
15
--
120
--
DYNAMIC
All dimensions are in inches.
Ref.: Dwg. No. C127471
TEST CIRCUIT
MSC81325M
2/3
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
MSC81325M
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