PRELIMINARY DATA
October 1992
GENERAL PURPOSE AMPLIFIERS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
HIGH GAIN & COLLECTOR EFFICIENCY
.
RUGGED OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
2.0 W MIN. WITH 10.0 dB GAIN
DESCRIPTION
The MSC81402 is a 28 Volt, Class C, common
base NPN biploar device designed for general pur-
pose amplifier applications in the UHF and L-Band
frequency range.
High gain and collector efficiency along with ex-
treme ruggedness are obtained using a gold me-
tallized emitter-ballasted overlay die geometry.
PIN CONNECTION
BRANDING
81402
ORDER CODE
MSC81402
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
50C)
6
W
I
C
Device Current*
0.23
A
V
CC
Collector-Supply Voltage*
30
V
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
25
C/W
*Applies only to rated RF amplifier operation
MSC81402
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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MSC81402
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