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Электронный компонент: MSC82003

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October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.
EMITTER BALLASTED
.
VSWR CAPABILITY
:1 @ RATED
CONDITIONS
.
REFRACTORY/GOLD METALLIZATION
.
HERMETIC STRIPAC
PACKAGE
.
P
OUT
=
3.0 W MIN. WITH 7.8 dB GAIN
@ 2.0 GHz
DESCRIPTION
The MSC82003 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC82003 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
PIN CONNECTION
BRANDING
82003
ORDER CODE
MSC82003
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
21.8
W
I
C
Device Current*
600
mA
V
CC
Collector-Supply Voltage*
35
V
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
8.0
C/W
*Applies only to rated RF amplifier operation
MSC82003
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
2.0 GHz
P
IN
=
0.5 W
V
CC
=
28 V
3.0
3.3
--
W
c
f
=
2.0 GHz
P
IN
=
0.5 W
V
CC
=
28 V
35
37
--
%
G
P
f
=
2.0 GHz
P
IN
=
0.5 W
V
CC
=
28 V
7.8
8.2
--
dB
C
OB
f
=
1 MHz
V
CB
=
28 V
--
--
6.5
pF
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
1mA
I
E
=
0mA
45
--
--
V
BV
EBO
I
E
=
1mA
I
C
=
0mA
3.5
--
--
V
BV
CER
IC
=
5mA
R
BE
=
10
45
--
--
V
I
CBO
V
CB
=
28V
--
--
1.0
mA
h
FE
V
CE
=
5V
I
C
=
200mA
15
--
120
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs FREQUENCY
COLLECTOR EFFICIENCY vs
FREQUENCY
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
MSC82003
2/5
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
P
IN
=
0.5 W
V
CC
=
28 V
Normalized to 50 ohms
P
OUT
=
Saturated
V
CC
=
28 V
Normalized to 50 ohms
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
1.0 GHz
4.4 + j 5.5
9.6 + j 16.0
1.5 GHz
4.5 + j 9.0
4.3 + j 7.0
1.7 GHz
4.5 + j 10.5
3.5 + j 4.0
2.0 GHz
4.6 + j 12.5
3.0 + j 1.0
MSC82003
3/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. C125518
All dimensions are in inches.
Frequency 2.0 GHz
RF Amplifier Power Output Test
TEST CIRCUIT
MSC82003
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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MSC82003
5/5