October 1992
GENERAL PURPOSE LINEAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.230 4L STUD (S027)
hermetically sealed
.
EMITTER BALLASTED
.
CLASS A LINEAR OPERATION
.
COMMON EMITTER
.
VSWR CAPABILITY
:1 @ RATED
CONDITIONS
.
ft 1.6 GHz TYPICAL
.
NOISE FIGURE 15.5 dB @ 2 GHz
.
P
OUT
=
27 dBm MIN. @ 1.0 GHz
DESCRIPTION
The MSC82040 is a hermetically sealed NPN
power transistor with a fishbone, emitter finger
ballasted geometry utilizing a refractory/gold me-
tallization system. The device is designed speci-
fically for Class A linear applications to provide
high gain and high output power at the 1.0 dB
compression point.
PIN CONNECTION
BRANDING
82040
ORDER CODE
MSC82040
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation
(see Safe Area)
--
W
I
C
Device Bias Current
200
mA
V
CE
Collector-Emitter Bias Voltage*
20
V
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
20
C/W
*Applies only to rated RF amplifier operation
MSC82040
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
1/6
TYPICAL PERFORMANCE
TYPICAL POWER OUTPUT & GAIN @ 1dB
COMPRESSION POINT vs FREQUENCY
TYPICAL POWER OUTPUT & GAIN @
1dB COMPRESSION POINT vs
COLLECTOR CURRENT
MAXIMUM OPERATING AREA FOR
FORWARD BIAS OPERATION
TYPICAL LINEAR GAIN vs
COLLECTOR CURRENT
MSC82040
3/6
PDF 
ZIP
