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Электронный компонент: MSC82302

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PRELIMINARY DATA
October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
.
HERMETIC STRIPAC
PACKAGE
.
P
OUT
=
1.8 W MIN. WITH 10.0 dB GAIN
DESCRIPTION
The MSC82302 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overlay die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82302 was designed for Class C Am-
plifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
PIN CONNECTION
BRANDI NG
82302
ORDER CODE
MSC82302
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
50
C)
6.0
W
I
C
Device Current*
300
mA
V
CC
Collector-Supply Voltage*
26
V
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
25
C/W
*Applies only to rated RF amplifier operation
MSC82302
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
2.3 GHz
P
IN
=
0.18 W
V
CC
=
22 V
1.8
--
--
W
c
f
=
2.3 GHz
P
IN
=
0.18 W
V
CC
=
22 V
40
--
--
%
G
P
f
=
2.3 GHz
P
IN
=
0.18 W
V
CC
=
22 V
10.0
--
--
dB
C
OB
f
=
1 MHz
V
CB
=
22 V
--
--
3.5
pF
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
1mA
I
E
=
0mA
44
--
--
V
BV
EBO
I
E
=
1mA
I
C
=
0mA
3.5
--
--
V
BV
CER
IC
=
5mA
R
BE
=
10
44
--
--
V
I
CBO
V
CB
=
22V
--
--
0.5
mA
h
FE
V
CE
=
5V
I
C
=
100mA
30
--
300
--
DYNAMIC
MSC82302
2/4
TEST CIRCUIT
RF Amplifier Power Output Test
Ref: Dwg. No. C125561
All dimensions are in inches
Frequency 2.3 GHz
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
P
IN
=
0.18 W
V
CC
=
22 V
Normalized to 50 ohms
Z
IN
Z
CL
H
H
L
L
M
M
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
2.0 GHz
7.0 + j 15.5
6.0 + j 7.0
M
=
2.15 GHz
7.5 + j 18.0
4.5 + j 3.5
H
=
2.3 GHz
7.0 + j 19.5
3.0 + j 1.0
MSC82302
3/4
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
MSC82302
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