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Электронный компонент: MSC83305

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October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER BALLASTED
.
VSWR CAPABILITY
:1 @ RATED
CONDITIONS
.
HERMETIC STRIPAC
PACKAGE
.
P
OUT
=
4.5 W MIN. WITH 4.5 dB GAIN
@ 3.0 GHz
DESCRIPTION
The MSC83305 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an emitter site ballasted geometry with a
refractory gold metallization system. This device
is capable of withstanding an infinite load VSWR
at any phase angle under rated conditions. The
MSC83305 was designed for Class C amplifier/os-
cillator applications in the 1.0 - 3.0 GHz frequency
range.
PIN CONNECTION
BRANDING
83305
ORDER CODE
MSC83305
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
50C)
17.6
W
I
C
Device Current*
700
mA
V
CC
Collector-Supply Voltage*
30
V
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
8.5
C/W
*Applies only to rated RF amplifier operation
MSC83305
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
3.0 GHz
P
IN
=
1.59 W
V
CC
=
28 V
4.5
5.0
--
W
c
f
=
3.0 GHz
P
IN
=
1.59 W
V
CC
=
28 V
30
33
--
%
G
P
f
=
3.0 GHz
P
IN
=
1.59 W
V
CC
=
28 V
4.5
5.0
--
dB
C
OB
f
=
1 MHz
V
CB
=
28 V
--
--
7.5
pF
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
1mA
I
E
=
0mA
45
--
--
V
BV
EBO
I
E
=
1mA
I
C
=
0mA
3.5
--
--
V
BV
CER
IC
=
5mA
R
BE
=
10
45
--
--
V
I
CBO
V
CB
=
28V
--
--
0.5
mA
h
FE
V
CE
=
5V
I
C
=
500mA
30
--
300
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs FREQUENCY
COLLECTOR EFFICIENCY vs FREQUENCY
PERCENT POWER OUTPUT & COLLECTOR
EFFICIENCY vs COLLECTOR VOLTAGE
MSC83305
2/5
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
P
OUT
=
Saturated
V
CC
=
28V
Normalized to 50 ohms
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
1.0 GHz
1.7 + j 7.2
9.5 + j 15.5
1.7 GHz
2.0 + j 11.2
4.2 + j 6.7
2.0 GHz
2.4 + j 14.0
3.5 + j 2.5
2.3 GHz
3.6 + j 17.4
3.1
-
j 1.2
2.7 GHz
6.0 + j 21.0
3.0
-
j 3.8
3.0 GHz
9.5 + j 24.0
3.0
-
j 7.2
MSC83305
3/5
PACKAGE MECHANICAL DATA
All dimensions are in inches.
Frequency 3.0 GHz
Ref.: Dwg. No. C125562
RF Amplifier Power Output Test
TEST CIRCUIT
MSC83305
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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MSC83305
5/5