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MSS40 / 50 Series
BACK TO BACK SCR MODULE
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Packaged in ISOTOP modules, the MSS40 /
MSS50 Series is based on two back-to-back SCR
configurations, providing high noise immunity.
They are suitable for high power applications such
as solid state relays, heating control systems,
welding equipment, motor control circuits...
The compactness of the ISOTOP package allows
high power density and optimized power bus
connections. Thanks to their internal ceramic pad,
they provide high voltage insulation (2500V
RMS),
complying with UL standards (File ref: E81734).
Symbol
Value
Unit
I
T(RMS)
55 and 70
A
V
DRM
/V
RRM
800 and 1200
V
I
GT
50
mA
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
MSS40
MSS50
I
T(RMS)
RMS on-state current
Tc = 80 C
55
A
Tc = 85 C
70
I
TSM
Non repetitive surge peak on-state
current
tp = 16.7 ms
Tj = 25C
420
630
A
tp = 20 ms
400
600
I
t
I
t Value for fusing
tp = 10 ms
Tj = 25C
800
1800
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 120 Hz
Tj = 125C
50
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
V
RGM
Maximum peak reverse gate voltage
5
V
A1
A2
G2
G1
ISOTOP
ISOTOP is a registred trademark of STMicroelectronics
PIN CONNECTIONS
A1
A2
G1
G2
1: Thyristor 2 Anode (A2)
2: Thyristor 2 Gate (G2)
3: Thyristor 1 Anode (A1)
4: Thyristor 1 Gate (G1)
4
1
3
2
MSS40 / 50 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
THERMAL RESISTANCES
PRODUCT SELECTOR
ORDERING INFORMATION
Symbol
Test Conditions
Value
Unit
MSS40
MSS50
I
GT
V
D
= 12 V R
L
= 33
MIN.
5
mA
MAX.
50
V
GT
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125C
MIN.
0.2
V
I
H
I
T
= 500 mA Gate open
MAX.
80
mA
I
L
I
G
= 1.2 I
GT
MAX.
120
mA
dV/dt
V
D
= 67 % V
DRM
Gate open
Tj = 125C
MIN.
1000
V/s
V
TM
I
TM
= 80 A tp = 380 s
Tj = 25C
MAX.
1.7
-
V
I
TM
= 100 A tp = 380 s
-
1.7
V
t0
Threshold voltage
Tj = 125C
MAX.
0.85
V
R
d
Dynamic resistance
Tj = 125C
MAX.
11
7
m
I
DRM
I
RRM
V
DRM
/ V
RRM
RATED
Tj = 25C
MAX.
20
A
Tj = 125C
10
mA
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (AC)
MSS40
0.6
C/W
MSS50
0.45
Part Number
Voltage (xxx)
Sensitivity
Package
800 V
1200 V
MSS40-xxx
X
X
50 mA
ISOTOP
TM
MSS50-xxx
X
X
50 mA
ISOTOP
TM
MSS 40 - 800
SCR
MODULE
SERIES
CURRENT:
40: 55A
50: 70A
VOLTAGE:
800: 800V
1200: 1200V
MSS40 / 50 Series
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OTHER INFORMATION
Note: xxx = voltage
Part Number
Marking
Weight
Base Quantity
Packing mode
MSS40-xxx
MSS40-xxx
27.0 g
10
Tube
MSS50-xxx
MSS50-xxx
27.0 g
10
Tube
Fig. 1: Maximum power dissipation versus RMS
on-state current.
Fig. 2: RMS on-state current versus case
temperature.
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
90
100
P(W)
= 180
MSS40
MSS50
180
IT(RMS)(A)
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
IT(RMS)(A)
=180
MSS40
MSS50
Tcase(C)
1E-3
1E-2
1E-1
1E+0
1E+1
0.1
0.2
0.5
1.0
K = [Zth(j-c)/Rth(j-c)]
tp(s)
-40
-20
0
20
40
60
80
100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 C]
IGT
IH & IL
Tj(C)
MSS40 / 50 Series
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Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6:Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10 ms, and
corresponding value of It.
Fig. 7-1: On-state characteristics (maximum
values) (MSS40).
Fig. 7-2: On state characteristics (maximum
values) (MSS50).
1
10
100
0
100
200
300
400
500
600
700
ITSM(A)
Non repetitiv e
Tj initial = 25 C
MSS40
MSS50
MSS40
Repetitive
Tcase = 80 C
MSS50
Repetitive
Tcase = 85 C
Number of cycles
One cycle
t = 20ms
ITSM(A), I t(A S)
2
2
5000
1000
100
0.01
0.10
1.00
10.00
0.0
1.0
2.0
3.0
4.0
5.0
6.0
10
100
500
ITM(A)
Tj = 25C
Tj max.:
Vto = 0.85V
Rd = 11m
Tj = Tjmax.
VTM(V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
10
100
1000
ITM(A)
Tj = 25C
Tj max.:
Vto = 0.85V
Rd = 7m
Tj = Tjmax.
VTM(V)
MSS40 / 50 Series
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2000 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco
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http://www.st.com
PACKAGE MECHANICAL DATA
ISOTOPTM
s
Recommended torque value: 1.3 Nm (max. 1.5 Nm) for the 6 x M4 screws (2 x M4 screws recom-
mended for mounting the package on the heatsink and the 4 provided screws.
s
The screws supplied with the package are adapted for mounting on a board (or other types of termi-
nals) with a thickness of 0.6 mm min. and 2.2 mm max.
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
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