UHF MOBILE APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4L STUD (M122)
epoxy sealed
.
450 - 512 MHz
.
12.5 VOLTS
.
EFFICIENCY 55%
.
COMMON EMITTER
.
P
OUT
=
2.0 W MIN. WITH 10.0 dB GAIN
DESCRIPTION
The SD1134 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for UHF
communications. This device utilizes improved me-
tallization to achieve infinite VSWR at rated oper-
ating conditions.
PIN CONNECTION
BRANDING
SD1134
ORDER CODE
SD1134
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
36
V
V
CEO
Collector-Emitter Voltage
16
V
V
CES
Collector-Emitter Voltage
36
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
0.75
A
P
DISS
Power Dissipation
5
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
35
C/W
SD1134
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
November 1992
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
470 MHz
P
IN
=
0.20 W
V
CC
=
12.5 V
2.0
--
--
W
G
P
f
=
470 MHz
P
IN
=
0.20 W
V
CC
=
12.5 V
10.0
--
--
dB
C
OB
f
=
1 MHz
V
CB
=
12 V
--
6
--
pF
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CES
I
C
=
5mA
V
BE
=
0V
36
--
--
V
BV
CEO
I
C
=
25mA
I
B
=
0mA
16
--
--
V
BV
EBO
I
E
=
1mA
I
C
=
0mA
4.0
--
--
V
I
CBO
V
CB
=
15V
I
E
=
0mA
--
--
1
mA
h
FE
V
CE
=
5V
I
C
=
100mA
20
--
--
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
POWER OUTPUT vs FREQUENCY
CAPACITANCE vs VOLTAGE
SD1134
2/4
TEST CIRCUIT
C1
: 0.8-10pF, Voltronics AJ10
C2,
: ATC 100-B, 7.5pF, Chip Capacitor
C3, C4 : ATC 100-B, 24pF, Chip Capacitor
C5
: ATC 100-B, 5.6pF, Chip Capacitor
C6
: 0.6-6pF, Johanson
C7
: ATC 100-B, 200pF, Chip Capacitor
C8
: 5.6
F Electrolytic
C9
: 0.1
F, Disc-Ceramic
C10
: 0.01
F, Disc-Ceramic
L1
: 2 Turns #22 Enameled 0.1" I.D.
R1
: 360
, 1/4" Wide
RFC
: 2 Turns in Ferroxcube VK 200/19-4B
Board Material: 3M-K-6098 1/16" Thick
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
450 MHz
2.7 + j 0.9
11.5
-
j 15.0
470 MHz
2.6 + j 1.3
12.2
-
j 13.5
512 MHz
2.2 + j 1.7
12.7
-
j 13.0
SD1134
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0122
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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SD1134
4/4
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