UHF MOBILE APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 2L STUD (M122)
epoxy sealed
.
470 MHz
.
12.5 VOLTS
.
EFFICIENCY 60%
.
COMMON EMITTER
.
P
OUT
=
5.0 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The SD1135 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for UHF
communications. This device utilizes improved me-
tallization to achieve infinite VSWR at rated oper-
ating conditions.
PIN CONNECTION
BRANDING
SD1135
ORDER CODE
SD1135
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
36
V
V
CER
Collector-Emitter Voltage
18
V
V
CES
Collector-Emitter Voltage
36
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
2.0
A
P
DISS
Power Dissipation
37
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
11.6
C/W
SD1135
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
October 1992
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
470 MHz
P
IN
=
0.70 W
V
CC
=
12.5 V
5.0
--
--
W
G
P
f
=
470 MHz
P
IN
=
0.70 W
V
CC
=
12.5 V
8.5
--
--
dB
C
OB
f
=
1 MHz
V
CB
=
12 V
--
19
--
pF
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CES
I
C
=
10mA
V
BE
=
0mA
36
--
--
V
BV
CEO
I
C
=
50mA
I
B
=
0mA
16
--
--
V
BV
EBO
I
E
=
2mA
I
C
=
0mA
4.0
--
--
V
I
CBO
V
CB
=
15V
I
E
=
0mA
--
--
1
mA
h
FE
V
CE
=
5V
I
C
=
200mA
20
--
--
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
CAPACITANCE vs VOLTAGE
SD1135
2/4
TEST CIRCUIT
C1,C2,
C5,C6 : 0.8-10pF, Voltronics AJ10
C3,C4 : ATC 100-B, 16pF, Chip Capacitor
C7
: ATC 100-B, 620pF, Chip Capacitor
C8
: 5.6
F, 35V, Electrolytic
C9
: 0.1
F, Disc-Ceramic
C10
: 0.01
F, Disc-Ceramic
L1
: 2 Turns, #22 Enameled, 0.1" I.D.
RFC
: 2 Turns in Ferroxcube VK 200/19-4B
Board Material 3M-K-6098, 1/16" Thick
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
450 MHz
1.4 + j 2.0
10.7
-
j 6.9
470 MHz
1.4 + j 2.9
11.4
-
j 5.8
512 MHz
1.5 + j 3.4
11.9
-
j 3.2
SD1135
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0122
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD1135
4/4
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