HF SSB APPLICATIONS
RF & MICROWAVE TRANSISTORS
.500 4LFL (M174)
epoxy sealed
.
30 MHz
.
12.5 VOLTS
.
COMMON EMITTER
.
IMD
-
32 dB
.
GOLD METALLIZATION
.
P
OUT
=
75 W MIN. WITH 13 dB GAIN
DESCRIPTION
The SD1405 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for HF
communications. This device utilizes diffused emit-
ter resistors to achieve infinte VSWR under rated
operating conditions.
PIN CONNECTION
BRANDING
SD1405
ORDER CODE
SD1405
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
36
V
V
CEO
Collector-Emitter Voltage
18
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
20
A
P
DISS
Power Dissipation
270
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.65
C/W
SD1405
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
July 1993
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
30 MHz
P
IN
=
3.8 W
V
CE
=
12.5 V
75
--
--
W
G
P
f
=
30 MHz
P
IN
=
3.8 W
V
CE
=
12.5 V
13
--
--
dB
IMD*
f
=
30 MHz
V
CE
=
12.5 V
I
CQ
=
100 mA
-
32
--
--
dB
C
OB
f
=
1 MHz
V
CB
=
12 V
--
350
--
pF
N ote:
*P
OUT
=
60WP EP, f
O
=
30 + 30.001 MHz
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
50 mA
I
E
=
0 mA
36
--
--
V
BV
CES
I
C
=
100 mA
V
BE
=
0 V
36
--
--
V
BV
CEO
I
C
=
100 mA
I
B
=
0 mA
18
--
--
V
BV
EBO
I
E
=
10 mA
I
C
=
0 mA
4.0
--
--
V
I
CES
V
CE
=
15 V
I
E
=
0 mA
--
--
15
mA
h
FE
V
CE
=
5 V
I
C
=
5 A
20
--
300
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs POWER INPUT
TWO TONE TEST
SD1405
2/4
TEST CIRCUIT
C1
: 9 - 180 pF, Arco 463
C2,C4
: 5 - 380pF, Arco 465
C3,C5
: 200pF, Unelco
C6
: 110 - 580pF, Arco 467
C7,C8
: 0.1
F Ceramic Disk
C9,C10
: 1000pF, Unelco
C11
: 10
F, Electrolytic, 35Vdc
C12
: 1000
F, Electrolytic, 50Vdc
L1,L3
: 2 1/2 Turns, #14 AWG, 1/4" I.D. Loose Wound
L2
: 16 Turns, #16 AWG, Enameled Wire On
Micrometals Torroid #T-94
L4
: 3 1/2 Turns, #16 AWG, Enameled Wire, 1/4" I.D.
L5
: 14 Turns, #16 AWG, Enameled Wire, 1/4" I.D.
R1,R2,R3 : 1.5 Ohm, 1 Watt Carbon
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
30 MHz
0.7 + j 0.75
1.2 + j 1.0
SD1405
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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SD1405
4/4
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