HF SSB APPLICATIONS
RF & MICROWAVE TRANSISTORS
.500 4LFL (M174)
epoxy sealed
.
30 MHz
.
28 VOLTS
.
IMD
-
30 dB
.
COMMON EMITTER
.
GOLD METALLIZATION
.
P
OUT
=
125 W MIN. WITH 15 dB GAIN
DESCRIPTION
The SD1407 is a 28 V epitaxial silicon NPN planar
transistor designed primarily for SSB communica-
tions. This device utilizes state-of-the-art diffused
emitter ballasting for improved ruggedness and
reliability.
PIN CONNECTION
BRANDING
1407
ORDER CODE
SD1407
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
65
V
V
CEO
Collector-Emitter Voltage
36
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
20
A
P
DISS
Power Dissipation
270
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.65
C/W
SD1407
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
October 1992
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
30 MHz
P
IN
=
3.95 W
V
CE
=
28 V
125
--
--
W
G
P
f
=
30 MHz
P
IN
=
3.95 W
V
CE
=
28 V
15
16
--
dB
IMD*
f
=
30 MHz
V
CE
=
28 V
I
CQ
=
100 mA
--
-
34
-
30
dB
C
OB
f
=
1 MHz
V
CB
=
30 V
--
250
--
pF
N ote:
*P
OUT
=
100W PE P, f
O
=
30 + 30.001 MHz
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
100mA
I
E
=
0mA
65
--
--
V
BV
CES
I
C
=
100mA
V
BE
=
0V
65
--
--
V
BV
CEO
I
C
=
100mA
I
B
=
0mA
35
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
4.0
--
--
V
I
CES
V
CE
=
30V
I
E
=
0mA
--
--
15
mA
h
FE
V
CE
=
5V
I
C
=
5A
10
--
200
--
DYNAMIC
TYPICAL PERFORMANCE
SAFE OPERATING AREA
SD1407
2/4
TEST CIRCUIT
C1
: 24 - 200pF Arco 425
C2,C4 : 50 - 380pF Arco 465
C3
: 9 - 180pF Arco 463
C5
: 10
F, Electrolytic, 35Vdc
C6
: 0.01
F, 100V, Ceramic
L1
: 4 Turns, #16 AWG, Tinned, 0.40" I.D.
L2,L5
: 1 Turn, #22 AWG, Tinned, formed with VK-200
#4B Ferroxcube
L4
: 17 Turns, #18 Enameled Wire Wrapped Around R1
R1
: 390
Resistor (2 Watt)
SD1407
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD1407
4/4
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