RF & MICROWAVE TRANSISTORS
800-960MHz BASE STATION APPLICATIONS
.2 3 0 6 LFL (M11 8 )
epoxy sealed
.
800 - 960 MHz
.
24 VOLTS
.
EFFICIENCY 50%
.
COMMON EMITTER
.
GOLD METALLIZATION
.
CLASS AB LINEAR OPERATION
.
P
OUT
=
15 W MIN. WITH 8.0 dB GAIN
DESCRIPTION
The SD1423 is a gold metallization epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation for
cellular base station applications. The SD1423 is
designed as a medium power output device or as
the driver for the SD1424.
PIN CONNECTION
BRANDING
SD1423
O R DE R CODE
SD1423
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Un it
V
CBO
Collector-Base Voltage
48
V
V
CEO
Collector-Emitter Voltage
25
V
V
CES
Collector-Emitter Voltage
45
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
2.5
A
P
DISS
Power Dissipation
29
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j- c)
Junction-Case Thermal Resistance
6
C/W
SD1423
1. Collector
3. Emitter
2. Base
THERMAL DATA
August 22, 1996
1/ 4
S ym bo l
Te s t C o nd itio ns
Va lu e
Un it
Min .
Typ.
Ma x.
P
OUT
f
=
9 60 MHz
V
CC
=
24 V
I
CQ
=
75 mA
15
--
--
W
P
G
f
=
9 60 MHz
V
CC
=
24 V
I
CQ
=
75 mA
8
--
--
dB
c
f
=
9 60 MHz
V
CC
=
24 V
I
CQ
=
75 mA
45
50
--
%
C
OB
f
=
1 MHz
V
CB
=
24V
--
20
24
pF
STATIC
S ym bo l
Te s t C o n ditio n s
Va lu e
Un it
Min .
Typ .
Ma x.
BV
CBO
I
C
=
5 0mA
I
E
=
0mA
48
50
--
V
BV
CEO
I
C
=
2 0mA
I
B
=
0mA
25
30
--
V
BV
EBO
I
E
=
5mA
I
C
=
0mA
3.5
4.0
--
V
I
CBO
V
C B
=
2 4V
I
E
=
0mA
--
--
1.0
mA
h
FE
V
C E
=
1 0V
I
C
=
1 00mA
20
--
100
--
DYNAMIC
TYPICAL PERFORMANCE
P OWER OUT PUT vs P OWER INP UT
FREQ.
Z
IN
(
)
Z
CL
(
)
900 MHz
1.30 + j 1.98
3.99 + j 5.55
930 MHz
1.42 + j 2.31
3.18 + j 4.97
960 MHz
1.45 + j 2.62
2.96 + j 4.07
P
OUT
=
15 W
V
CE
=
75 mA
I
CQ
=
24 V
IMPEDANCE DATA
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
SD1423
2/4
TEST CIRCUIT
C1, C2
:0.8 - 8.0pfGigatrim Variable Capacitor
C3, C6,
C7, C8
:100pf ATC Chip Capacitor
C4 : 10
F, 63V Electrolytic
C5 : 0.1
F Capacitor CK06BX104K
D1, D2
:SD1423 trasistors used as diodes
L1, L3
:4 Turn, #22 AWG
L2 : #22 AWG, Ferrite Core
Q1: SD1423 Bias Transistor
Q2: SD1423 transistor under test
R1 : 1.5 k
, 1/4W Resistor
R2 : 5K
5% Potentiometer
Board Material: 3M Teflon Fiberglass Er = 2.55, H = .030"
All dimensions in mils unless otherwise specified
TEST CIRCUIT DIMENSIONS
SD1423
3/ 4
PACKAGE MECHANICAL DATA
Ref.: UDCS Doc. No.1010941 re v. B
TEST CIRCUIT LAYOUT
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-TH OMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIE S
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia -
SD1423
4/4
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